Research on Material Characteristics of GaAlAs/GaAs Superluminence Diodes

LI Mei,LI Hui,WANG Yu-xia,LIU Guo-jun,QU Yi
2007-01-01
Chinese Journal of Luminescence
Abstract:Superluminescent light emitting diode(SLD) is a kind of semiconductor light source with high performance comparing to those of laser diode and light emitting diode.One of the key device in fibre optic gyroscope systems is a superluminescent diode(SLD).In this paper,non-uniform well-thickness multi-quantum wells structure was adopted to widen the output spectrum of superluminescent diode.The epitaxial material was fabricated by molecular beam epitaxy(MBE) technique.Optical and structural characteristic of the film was studied by photoluminescence(PL) at different temperature,X-ray double crystal diffraction and electroche-mical C-V profiling method.The radition wavelength of 844 nm was obtained on PL spectrum(300 K).The experimental results of X-ray double crystal rocking curve and low temperature(10~300 K) PL show that the structure designed for superluminescent diode have been realized.The spectral FWHM over 26 nm,CW output power of over 6 mW have been achieved at operating current of 140 mA.
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