Direct nitridation of high-k metal oxide thin films using argon excimer sources

J. J. Yu,I. I. Liaw,I. W. Boyd
DOI: https://doi.org/10.1049/el:20052859
2005-01-01
Electronics Letters
Abstract:Reported, for the first time, is the formation of metal oxynitride thin films via direct nitridation of the metal oxide films by active nitrogen species generated from molecular nitrogen with argon excimer sources. Preliminary results on TaO/sub x/N/sub y/ thin films formed from 9 nm Ta/sub 2/O/sub 5/ films have exhibited excellent electrical properties with three orders magnitude lower leakage cu...
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