Abstract:The effects of interface oxidation on the transport behavior of the 2-D electron gas (2DEG) in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN (PEALD-AlN) passivation were investigated using temperature-dependent Hall-effect and X-ray photoelectron spectroscopy (XPS) characterizations. AlGaN/GaN heterostructure with a 4-nm-thick PEALD-AlN passivation exhibits good 2DEG transport behavior and stability at moderately high temperature (e.g., 275 °C). However, serious oxidation of the AlN/GaN (cap layer) interface occurs as the sample is heated up to 400 °C in low-pressure atmosphere, as verified by an increased Ga-O bond in Ga 3d core-level spectra. The oxidation leads to a significant reduction of 2.47 × 1012 cm−2 in the 2DEG density in the channel. A modified AlN passivation structure with Al2O3/AlN (10/4 nm) stack is shown to be able to effectively suppress the oxidation of the AlN/GaN interface, demonstrating an enhanced 2DEG density and high-temperature stability even when the sample is heated up to 500 °C. Based on XPS and 2DEG recovery experiments, it is suggested that acceptor-like deep levels have been generated in the near-surface region of AlGaN/GaN heterostructure because of the oxidation, and trapping of these deep levels results in significant depletion of the 2DEG in the channel. The effects of PEALD-AlN passivation on the strain in the AlGaN barrier of AlGaN/GaN heterostructures are also evaluated with high-resolution X-ray diffraction technique.

Degradation mechanism of two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures

Effects of Interface Oxidation on the Transport Behavior of the Two-Dimensional-electron-gas in AlGaN/GaN Heterostructures by Plasma-Enhanced-atomic-layer-deposited AlN Passivation

Hysteresis Phenomena of the Two Dimensional Electron Gas Density in Lattice-Matched Inaln/Gan Heterostructures

Two-Dimensional Electron Gas Densities in Algan/Aln/Gan Heterostructures

Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure

Degradation in InAlN/GaN-based Heterostructure Field Effect Transistors: Role of Hot Phonons

Improved electrical properties of the two-dimensional electron gas in AlGaN/GaN heterostructures using high temperature AlN interlayers

Electrical and Optical Properties of G-Gan/al0.5ga0.5n 2D/3D Heterojunction under Surface Oxidation Via First-Principles

Electrical and optical properties of g-GaN/Al 0.5 Ga 0.5 N 2D/3D heterojunction under surface oxidation via first-principles

Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heterostructures with Porous InGaN Layer

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress

Effects of the passivation of SiNx with various growth stoichiometry on the high temperature transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

Characterization of Different-Al-content AlGaN/GaN Heterostructures on Sapphire

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Two-dimensional Electron and Hole Gases in InxGa1−xN/AlyGa1−yN/GaN Heterostructure for Enhancement Mode Operation

Investigation of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate

High Temperature Performance of GaN and AlxGa1-xN/GaN Heterostructures

High Temperature Dependence of the Density of Two-Dimensional Electron Gas in Al 0.18 Ga 0.82 N/GaN Heterostructures

Influnce of Al-content on the Property of the Two-Dimensional Electron Gases in AlxGa1-xN/GaN Heterostructures

Improved Transport Properties of the Two-Dimensional Electron Gas in AlGaN∕GaN Heterostructures by AlN Surface Passivation Layer

The Mobility of Two-Dimensional Electron Gas in Algan/Gan Heterostructures with Varied Al Content