Abstract:A significant EB effect with temperature‐dependent polarity‐reversal behavior is observed in FePS3/Fe3GaTe2 heterostructures under high cooling fields (e.g., μ0H ≥ 0.5 T). A model composed of a top FePS3/interfacial FePS3/Fe3GaTe2 sandwich structure is proposed. Charge transfer from Fe3GaTe2 to FePS3 induces net magnetic moments (∆M) in FePS3, and the reversal of ∆M of interfacial FePS3 leads to the polarity‐reversal of EB. Exchange bias (EB) in antiferromagnetic (AFM)/ferromagnetic heterostructures is crucial for the advancement of spintronic devices and has attracted significant attention. The common EB effect in van der Waals heterostructures features a low blocking temperature (Tb) and a single polarity. In this work, a significant EB effect with a Tb up to 150 K is observed in FePS3/Fe3GaTe2 heterostructures, and in particular, the EB exhibits an unusual temperature‐dependent polarity‐reversal behavior. Under a high positive field‐cooling condition (e.g., μ0H ≥ 0.5 T), a negative EB field (HEB) is observed at low temperatures, and with increasing temperature, the HEB crosses zero at ≈20 K, subsequently becomes positive and later approaches zero again at Tb. A model composed of a top FePS3/interfacial FePS3/Fe3GaTe2 sandwich structure is proposed. The charge transfer from Fe3GaTe2 to FePS3 at the interface induces net magnetic moments (∆M) in FePS3. The interface favors AFM coupling, and thus the reversal of ∆M of the interfacial FePS3 leads to the polarity‐reversal of EB. Moreover, the EB can be extended to the bare Fe3GaTe2 region of the Fe3GaTe2 flake partially covered by FePS3. This work provides opportunities for a deeper understanding of the EB effect and opens a new route toward constructing novel spintronic devices.

Exchange Bias Driven by the Dzyaloshinskii-Moriya Interaction and Ferroelectric Polarization at G-Type Antiferromagnetic Perovskite Interfaces

Ab Initio Study of the Intrinsic Exchange Bias at the SrRuO_3/SrMnO_3 Interface

Ferroelectric Exchange Bias Affects Interfacial Electronic States

Engineering exchange bias at the interface of self-polarized ultrathin ferroelectric and ferromagnetic

Exchange Bias of the Interface Spin System at the Fe/MgO Interface.

Exchange Bias Modulated by Antiferromagnetic Spin-Flop Transition in 2D Van der Waals Heterostructures

Exchange Bias Effect Modulated Anisotropic Magnetoresistance in Fe/Ymno3 Multiferroic Bilayers

Tilt Engineering of Exchange Coupling at G-Type Srmno3/(La,Sr) Mno3 Interfaces

Enhanced Exchange Bias in All-Oxide Heterostructures with Cation-Ordered Ferrimagnetic Double-Perovskite

Hole doping in compositionally complex correlated oxide enables tunable exchange biasing

Tunable perpendicular exchange bias in oxide heterostructures

Exchange bias in the van der Waals heterostructure MnBi2Te4/Cr2Ge2Te6

Exchange bias effect of epitaxial noncollinear antiferromagnetic Mn 3 Sn films

Intrinsic Exchange Bias from Interfacial Reconstruction in an Epitaxial NixCoyFe3-x-yO4(111)/α-Al2O3(0001) Thin Film Family

Interfacial Ferromagnetic Coupling and Positive Spontaneous Exchange Bias in SrFeO3- x/La0.7Sr0.3MnO3 Bilayers

Harnessing van der Waals CrPS4 and Surface Oxides for non-monotonic pre-set field induced Exchange Bias in Fe3GeTe2

Probing exchange bias at the surface of a doped ferrimagnetic insulator

Electrically controllable exchange bias via interface magnetoelectric effect

Exchange Bias in Van Der Waals CrCl3/Fe3GeTe2 Heterostructures.

Polarity‐Reversal of Exchange Bias in van der Waals FePS3/Fe3GaTe2 Heterostructures

Ferroelectric Materials: Angular Dependence of Exchange Bias and Magnetization Reversal Controlled by Electric-Field-Induced Competing Anisotropies (Adv. Mater. 2/2016).