Achieving a sub-10 nm nanopore array in silicon by metal-assisted chemical etching and machine learning
Yun Chen,Yanhui Chen,Junyu Long,Dachuang Shi,Xin Chen,Maoxiang Hou,Jian Gao,Huilong Liu,Yunbo He,Bi Fan,Ching-Ping Wong,Ni Zhao
DOI: https://doi.org/10.1088/2631-7990/abff6a
2021-05-25
International Journal of Extreme Manufacturing
Abstract:Abstract Solid-state nanopores with controllable pore size and morphology have huge application potential. However, it has been very challenging to process sub-10 nm silicon nanopore arrays with high efficiency and high quality at low cost. In this study, a method combining metal-assisted chemical etching and machine learning is proposed to fabricate sub-10 nm nanopore arrays on silicon wafers with various dopant types and concentrations. Through a SVM algorithm, the relationship between the nanopore structures and the fabrication conditions, including the etching solution, etching time, dopant type, and concentration, was modeled and experimentally verified. Based on this, a processing parameter window for generating regular nanopore arrays on silicon wafers with variable doping types and concentrations was obtained. The proposed machine-learning-assisted etching method will provide a feasible and economical way to process high-quality silicon nanopores, nanostructures, and devices.
engineering, manufacturing,materials science, multidisciplinary