High Efficiency and Long Lifetime OLED Based on a Metal-Doped Electron Transport Layer

JH Lee,MH Wu,CC Chao,HL Chen,MK Leung
DOI: https://doi.org/10.1016/j.cplett.2005.09.104
IF: 2.719
2005-01-01
Chemical Physics Letters
Abstract:The OLED performance of cesium (Cs) doped 4,4′-bis(5-phenyl-[1,3,4]oxadiazol-2-yl)-2,2′-dinaphthylbiphenyl (bis-OXD), a metal-doped electron transport layer, is reported. Device lifetime increases because: (1) Cs is heavy and difficult to diffuse in an organic matrix, and (2) The host material, bis-OXD, exhibits a high glass-transition temperature (Tg) of 147°C. The average roughness of the thin film is small hence the leakage current of the corresponding OLED devices is low. By using a silver cathode, an OLED with a 2.59V reduction in driving voltage, a 47.3% increase in current efficiency, and a 3.14 times enhancement in operation lifetime was demonstrated.
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