High Efficiency WOLEDs with Low-Voltage and High Carriers Balance

WEI Fu-xiang,FANG Liang,JIANG Xue-yin,ZHANG Zhi-lin
DOI: https://doi.org/10.16136/j.joel.2010.03.010
2010-01-01
Abstract:White organic light emitting devices(OLEDs) with the structure of ITO/m-MTDATA:x%4F-TCNQ/NPB/TBADN:EBDP:DCJTB/Bphen:Liq/LiF/Al are demonstrated.A p-doping transport layer that includes 4F-TCNQ doped into m-MTDATA is used as hole transporting layer(HTL) and an n-doping transport layer comprised of Liq doped into Bphen is used as electron transporting layer(ETL) to lower cathode barrier and facilitate carrier injection.An effective carrier balance(the number of holes is equal to the number of electrons) between holes and electrons is considered to be one of the most important factors to improve OLEDs.The holes injection and transport of the devices are controlled by adjusting doping concentration of 4F-TCNQ for good balance of carriers.The maximum current efficiency and power efficiency of devices are 9.3 cd/A and 4.6 lm/W,respectively.
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