Abstract:A novel method is described for preparing high-quality VO2 thin films which exhibit an abrupt resistivity change of 4-5 orders of magnitude at about 60 degrees C; this is the best result among those so far prepared on non-crystal substrates. To show the difference from the ordinary sol-gel method which uses vanadium alkoxide as precursor, this method has been called (by the authors) the inorganic sol-gel method, for it uses V2O5 powder as precursor. This newly developed method shows some advantages in that it produces high-quality VO2 thin films (adherent, crack-free, and with good switching properties) in a cheap, simple, and reproducible way. The method consists of four processes: quenching, coating, drying and vacuum heat treatment. These processes show strong effects on the properties of the final films. In this paper, the effects of the drying process on the film blistering and the effects of film thickness, quenching temperature, and heat treatment time on the resistivity switching property were studied, and DSC, XRD, ESCA, and SEM were utilized to study the drying process and characterize the films. It was found that when the drying temperature was > 300 degrees C and heating rate was < 0.5 degrees C min(-1) in the drying process, the final films would be blister-free and crack-free (on non-crystal substrates). It was also found that the magnitude of resistivity change at the phase transition of the samples treated at 500 degrees C for 10 h under a pressure of 0.8 Pa increased with increasing thickness (in the thickness range 0.4 to 8 mu m). When the film thickness was about 1 mu m, the magnitude of resistivity change of the samples treated under the same conditions was found to decrease with increasing quenching temperature. In a certain range of treatment time the magnitude of resistivity change of the samples treated at 500 degrees C under a pressure of 0.8 Pa was found to increase with increasing heat treatment time.

Effect of Anneal Heating Rate on Phase Transition Characteristics of Vo2 Thin Film

Effect of Annealing Temperature on Phase Transition Characteristics of VO2 Thin Film

Effect of Annealing Temperature on Thermochromic Properties of Vanadium Dioxide Thin Films Deposited by Organic Sol–gel Method

Phase Transition Properties of Vanadium Oxide Films Deposited by Polymer-Assisted Deposition

Effect of the Structure and Valence State on the Properties of VO 2 Thin Films

Tuning Phase Transition Temperature of VO_2 Thin Films with Annealing O_2 Pressure

Optical and Electrical Properties of VO2 Thin Films Affected by Valence and Structure

Effect of porous morphology on phase transition in vanadium dioxide thin films

Evolution of Structure and Electrical Properties with Annealing Time in Solution-Based VO2 Thin Films

Preparation and phase transition characterization of VO 2 thin film on single crystal Si (100) substrate by sol–gel process

Tuning Phase Transition Temperature of VO2thin Films by Annealing Atmosphere

Effect Of Annealing Processes On Composition And Thermal-Sensitive Properties Of Vanadium Oxide Thin Films

PHASE TRANSFORMATION AND R–T CHARACTERISTICS OF VACUUM ANNEALED VANADIUM OXIDE THIN FILMS

Effects of Annealing Ambient on Oxygen Vacancies and Phase Transition Temperature of Vo2 Thin Films

Vanadium dioxide films with good electrical switching property

Effects of Annealing Parameters on Optical Properties of Thermochromic Vo2 Films Prepared in Aqueous Solution

Thermal Stability of VO2 Thin Films Deposited by Sol–gel Method

Annealing temperature effect on the temperature coefficient of resistance for vanadium oxide (VOx) thin films as bolometer materials

Effects Of Annealing Time On The Application Of Vanadium Dioxide Films In Smart Windows

Thermal transition behaviors of vanadium pentoxide film during post-deposition annealing

Annealing effects on W-doped VO 2 thin films prepared from magnetron sputtering