Temperature Dependence of Resistivity in Polycrystalline Manganites

SL Yuan,J Tang,L Liu,W Chen,LF Zhao,Y Tian,H Cao,GH Zhang,LJ Zhang,W Feng,S Liu,ZC Xia
DOI: https://doi.org/10.1209/epl/i2003-00531-8
2003-01-01
Europhysics Letters
Abstract:Based on the thermal activation and the spin-polarized tunneling, which depend on temperature range and grain separation, the transport phenomenon is discussed for polycrystalline manganites. By averaging over the distribution of grain separation, we derive a general expression of resistivity which in form is similar to a two-component description. A quantitative agreement with the experimental data obtained in polycrystalline La2/3Ca1/3MnO3 gives a strong support to this model. Some main features dealing with the grain boundary effect in polycrystalline manganites are discussed on the basis of this model.
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