Abstract:To study the physical property effects of the laser on GaInP/GaAs/Ge solar cells and their sub-cell layers, a pulsed laser with a wavelength of 532 nm was used to irradiate the solar cells under various energy conditions. The working performance of the cell was measured with a source meter. The electroluminescence (EL) characteristics were assessed using an ordinary and an infrared camera. Based on the detailed balance theory, in the voltage characteristics of an ideal pristine cell, the GaInP layer made the most significant voltage contribution, followed by the GaAs layer, with the Ge layer contributing the least. When a bias voltage was applied to the pristine cell, the top GaInP cell emitted red light at 670 nm, the middle GaAs cell emitted near-infrared light at 926 nm, and the bottom Ge cell emitted infrared light at 1852 nm. In the experiment, the 532 nm laser wavelength within the response spectrum bands of the GaInP layer and the laser passed through the glass cover slip and directly interacted with the GaInP layer. The experimental results indicated that the GaInP layer first exhibited different degrees of damage under laser irradiation, and the cell voltage was substantially attenuated. The GaInP/GaAs/Ge solar cell showed a decrease in electrical and light emission characteristics. As the laser energy increased, the cell's damage intensified, gradually leading to a loss of photoelectric conversion capability, the near-complete disappearance of red light emission, and a gradual degradation of near-infrared emission properties. The EL imaging revealed varying damage states across the triple-junction gallium arsenide solar cell's sub-cells.

Damage effect of monocrystalline silicon solar cells under ultrashort pulse laser irradiations

Research of laser irradiation effect on monocrystalline silicon solar cells and single junction GaAs solar cells

Study on Radiation Damage of Silicon Solar Cell Electrical Parameters by Nanosecond Pulse Laser

Damage threshold research of monocrystalline silicon solar cells under femtosecond laser illumination

Thermal Damage of Monocrystalline Silicon Irradiated by Long Pulse Laser

Laser-induced Damage in a Silicon-Based Photodiode by MHz Picosecond Laser

Experimental study about laser induced damage to photovoltaic detectors in vacuum

Experimental study of the damage morphology induced by the millisecond–nanosecond combined-pulse laser with different pulse delay on silicon

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Thermal accumulation effect of a three-junction GaAs cell with multipulse laser irradiation

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

Ultra-Short Pulsed Laser-Induced Damage in Inorganic Silicon Materials

Irradiated Damages of Femtosecond Laser in Two Different Monocrystalline Silicon Wafers

Effect of Laser Fluence on the Properties of Microstructured Silicon Solar Cells

Damage Characteristics Analysis of Laser Ablation Triple-Junction Solar Cells Based on Electroluminescence Characteristics

Laser Plasma Effects On Surface Damage Characteristics Of Silicon

Improvement of Laser-Induced Damage on High-Efficiency Solar Cells via Top-Hat Beam Ablation

Effect of Different Ambient Atmospheres on the Damage Caused to Silicon by 1064-Nm Laser Pulses

Laser-induced Damages to Charge Coupled Devices with Combined Nanosecond/picosecond Short-Pulse Lasers

Morphological and Damage Growth Characteristics of Shell-Type Damage of Fused Silica Optics Induced by Ultraviolet Laser Pulses.

Surface Damage Induced by A Combined Millisecond and Nanosecond Laser