Abstract:Graphene, a monolayer of carbon atoms tightly packed into a two-dimensional (2D) hexagonal lattice, has recently been successfully isolated from highly ordered pyrolytic graphite (HOPG) and shown to be thermodynamically stable and to exhibit astonishing transport properties, such as an electron mobility of 25;000 cm2=Vs and velocity of 10 cm=s at room temperature [1–3]. With the high carrier mobility enabled by its unique electronic structure, graphene has attracted many research efforts recently. Initial works have demonstrated the great potential of graphene for modern electronics applications. These efforts are focused on overcoming the challenges faced to incorporate graphene into microelectronic applications. The three particular challenges are developing a synthesis technique to manufacture graphene over wafer-scale areas, opening an energy bandgap in graphene, and forming a high-quality gate dielectric on the surface of graphene. An interesting differentiation between the many well-established semiconductor materials in microelectronic industry and graphene is how it was discovered. Most semiconductor materials are created through deposition or melt processes, but the origin of graphene is unique. The first successfully isolated sheet of graphene was formed by Geim and Novoselov through a mechanical exfoliation technique which used cellophane tape to remove and subsequently transfer graphene sheets from HOPG to SiO2 [2]. This produced graphitic flakes tens of microns in size upon which electronic devices were fabricated. The pioneering work on isolating graphene has been recognized by earning its discoverers the Nobel Prize in Physics for 2010. Since the mechanical exfoliation technique does not require expensive equipment, this approach is still widely used for research purposes. Various alternative methods have been studied and developed to fabricate uniform graphene

Temperature Dependent Electron Transport in Graphene

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Temperature Dependence of the Electrical Transport Properties of Multilayer Graphene

Electron Transport in Disordered Graphene Nanoribbons

Transport Measurements on Ultra-Clean Dual-Gated Suspended Bilayer Graphene

Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods

Disorder-induced temperature-dependent transport in graphene: Puddles, impurities, activation, and diffusion

Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes

High-Field Electrical and Thermal Transport in Suspended Graphene

Theory and Measurements of Room Temperature Transport in Graphene Using Sio2 Backgate and Electrochemical Gate

Electronic Transport in Disordered Bilayer and Trilayer Graphene

Temperature and gate voltage dependent electrical properties of graphene field-effect transistors

Room temperature carrier transport in graphene

Chapter 6 Magneto-Transport on Epitaxial Graphene

Comparison of Mobility Extraction Methods Based on Field-Effect Measurements for Graphene

Systematic Characterization of Transport and Thermoelectric Properties of a Macroscopic Graphene Fiber

Thermal Transport in Graphene Junctions and Quantum Dots

Low-Temperature Thermal Transport Characteristics in Epitaxial Bilayer Graphene Microbridges

Electron transport in the single-layer semiconductor

Low-field magnetotransport in graphene cavity devices.

Measurement of the Electronic Thermal Conductance Channels and Heat Capacity of Graphene at Low Temperature