Abstract:The stability of a field-emission event, i.e., the stability of the emission current over a long period of time, against thermal effects, etc., is one of the key factors for its application in real devices. Although nanostructures have the advantages of high aspect ratios and faster device turn-on times, the small masses and large surface areas make them vulnerable to both chemical and physical damages and they have a lower melting point compared to bulk materials of same compositions. SnO2, one of the most attractive oxide semiconductors, which has with a relatively low work function of 4.7 eV, has been a perspective candidate for field emitters. A highly stable field emitter based on thin and quasi-aligned SnO2 nanowire ensembles with uniform diameter is shown. Field-emission measurements of these SnO2 nanowire ensembles show low turn-on and threshold voltages of 3.5 V mu m-1 and 4.63 V mu m-1, respectively, at an anodesample distance of 200 mu m and very long term scale stability of more than 2400 min, acquired at the electric field of 4.65 V mu m-1. Such values are not only better than those of the recently developed SnO2 nanostructures with different morphologies and of randomly oriented SnO2 nanowire ensembles with a similar diameter distribution, but also comparable with the most widely studied field-emission materials, such as carbon nanotubes and ZnO nanostructures. The potential for using these thin SnO2 nanowire ensembles with uniform diameter in field emitters is shown, with particular promise in those operated for long-term real device applications.

One-Step Growth and Field Emission Properties of SnO<sub>2</sub>-Capped Silicon Nanowires: A Sn-Catalyzed Approach

Field Emission from in Situ -Grown Vertically Aligned SnO 2 Nanowire Arrays

Facile synthesis of novel one-dimensional hierarchical SiC@SiO2@c-C nanostructures and their field emission properties

Controllable low-temperature chemical vapor deposition growth and morphology dependent field emission property of SnO2 nanocone arrays with different morphologies.

Field Emission from Patterned SnO2 Nanostructures

Controllable Synthesis and Field Emission Properties of SnO2zigzag Nanobelts

Patterned Growth and Field Emission of ZnO Nanowires

Thin SnO2 Nanowires with Uniform Diameter as Excellent Field Emitters: A Stability of More Than 2400 Minutes

Tuning the Electrical Properties of Zno-Si Nano-Contacts and Its Effect on Field Electron Emission from Zno Nanowires

Growth Mechanisms of SnO2/Sn Nanocables

Optical and Electrical Performance Of, Sno2 Capped Zno Nanowire Arrays

Electrical properties of a single Ni-contact SnO2 nanowire field-effect transistors

Field emission of comb-like chromium disilicide nanowires prepared by an in situ chloride-generated route

Simple Catalyst-Free Method to the Synthesis of Β-Sic Nanowires and Their Field Emission Properties

Single Crystalline SnO2 Nanowires Obtained from Heat-Treated SnO2 and C Mixture and Their Electrochemical Properties

Synthesis and Field Emission of ZnO Nanostructures on CuO Catalyzed Porous Silicon Substrate

Growth of Tapered SiC Nanowires on Flexible Carbon Fabric: Toward Field Emission Applications

Field Emission Property Improvement of ZnO Nanowires Coated with Amorphous Carbon and Carbon Nitride Films

Synthesis and field emission of patterned SnO2 nanoflowers

Considerable Enhancement of Field Emission of SnO 2 Nanowires by Post-Annealing Process in Oxygen at High Temperature

Cobalt Silicide Nanostructures: Synthesis, Electron Transport, and Field Emission Properties