Abstract:Spin-electronic devices are poised to become part of mainstream microelectronic technology .Downsizing them, however, faces the intrinsic difficulty that as ferromagnets become smaller, it becomes more difficult to stabilize their magnetic moment. Antiferromagnets are much more stable, and thus research on antiferromagnetic spintronics has developed into a fast-growing field. Here, we provide proof of concept data that allows us to expand the area of antiferromagnetic spintronics to the hitherto elusive level of individual molecules. In contrast to all previous work on molecular spintronics, our detection scheme of the molecule's spin state does not rely on a magnetic moment. Instead, we use field-effect transistor devices constituting of an isolated, contacted single-wall carbon nanotube covalently bound to a limited number of molecular antiferromagnets incorporating four Mn(II) or Co(II) ions. Time-dependent quantum transport measurement along the functionalized nanotube show step-like transitions between several distinct current levels, which we attribute to transitions between different antiferromagnetic states of individual molecular complexes grafted on the nanotube. A statistical analysis of the switching events using factorial cumulants indicates that the cobalt complexes switch independently from each other, while a coherent superposition of the antiferromagnetic spin states of the molecules along the nanotube is observed for the manganese complexes. The long coherence time (several seconds at 100 mK) is made possible by the absence of spin and orbital momentum in the relevant states of the manganese complex, while the cobalt complex includes a significant orbital momentum contribution due to the pseudo-octahedral d$^7$ metal centers.

Electrical transport between epitaxial manganites and carbon nanotubes

Transformation of spin information into large electrical signals via carbon nanotubes

Electronic Transport of the Manganite-Based Heterojunction with High Carrier Concentrations

Atomic-Scale Control of Magnetism at the Titanite-Manganite Interfaces.

Inhomogeneous-strain-induced Magnetic Vortex Cluster in One-Dimensional Manganite Wire.

Emerging Transport Behavior in Manganites Wires

Perpendicular Manganite Magnetic Tunnel Junctions Induced by Interfacial Coupling

Spin Transport Properties of MnBi2Te4-Based Magnetic Tunnel Junctions

Nanoscale control of low-dimensional spin structures in manganites*

Novel Quantum Spin Assisted Tunneling in Half Metallic Manganite Tunnel Junctions

Mn 2 NT 2 (T = O, F) Nanosheets for Electrically and Thermally Driven Magnetic Tunnel Junctions

Independent and coherent transitions between antiferromagnetic states of few-molecule systems

Electrostatic-doping-controlled phase separation in electron-doped manganites

Electrophoretic-like Gating Used to Control Metal-Insulator Transitions in Electronically Phase Separated Manganite Wires.

Electric Field Control of Spin Transport

Room-temperature magnetoresistance in an all-antiferromagnetic tunnel junction

Electronic structure, Curie temperature, and magnetic transport of a two-dimensional multiferroic heterostructure

Colossal Resistivity Change Besides Magnetoresistance: an Extended Theoretical Framework for Electronic Transport of Manganites

Transport : Nanoelectronics II-Spintronics and Magnetotransport

Intrinsic robust antiferromagnetism at manganite surfaces and interfaces

Spin Transport in Ge Nanowires for Diluted Magnetic Semiconductor-Based Nonvolatile Transpinor