3.1~10.6 GHz CMOS ultra-wideband low noise amplifier

WANG Chun-hua,DAI Pu-xing,YANG Kai
DOI: https://doi.org/10.3969/j.issn.1007-0249.2010.01.015
2010-01-01
Abstract:The design of a low power CMOS variable gain UWB (Ultra-wideband) LNA (Low Noise Amplifier) is introduced in this paper. It is simulated using 0.18μm RF CMOS process. The results of the post-layout simulation show that with an ultra low supply voltage of 0.85V, the LNA consumes a low DC power of 10mW. The simulation results show that form 3.1 to 10.6 GHz, the gain S21 is 14±0.4dB, and it is variable. S11 and S22 are less than -10dB. The minimal NF is 3.3dB.
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