Abstract:The direct growth of III-V semiconductors on silicon holds tremendous potential for photonics applications. However, the inherent differences in their properties lead to defects in the epitaxial layer, including threading dislocations (TDs), antiphase boundaries (APBs), and thermal cracks, significantly impacting device performance. Current processes struggle to suppress these defects simultaneously, necessitating the development of methods to inhibit TDs and APBs in a thin buffer on silicon. This study introduces a GaSb buffer layer during GaAs epitaxy on a silicon (001) substrate. This approach successfully suppresses defect formation by promoting the formation of interfacial misfit dislocation (IMF) arrays at both the AlSb/Si and GaAs/GaSb interfaces. The resulting GaAs layer exhibits a step-flow surface with a rough mean square of approximately 3.8 nm and a full width at half maximum of 158 arcsec. Remarkably, the growth is achieved without any observable interfacial intermixing. Building on this platform, InAs/GaAs quantum dots (QDs) are grown with a density of 3.8E10/cm2, emitting at a wavelength of 1288 nm. This breakthrough holds immense promise for developing high-quality GaAs films with reduced defect densities on silicon for O band lasers, laying the foundation for the mass production of silicon-based integrated circuits.

Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array

Room-temperature Lasing at 1.82μm of GaInSb∕AlGaSb Quantum Wells Grown on GaAs Substrates Using an Interfacial Misfit Array

1.54 [micro Sign]m GaSb/AlGaSb Multi-Quantum-well Monolithic Laser at 77 K Grown on Miscut Si Substrate Using Interfacial Misfit Arrays

Monolithically Integrated Iii-Sb Diode Lasers on Si Using Interfacial Misfit Arrays.

Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

GaAs/AlGaAs quantum cascade lasers

Optimization of 1300 Nm Quantum Well Laser on GaAs Substrates

Electrically Pumped Continuous‐wave 1.3‐µm InAs/GaAs Quantum Dot Lasers Monolithically Grown on Si Substrates

Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.

Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates

Design and Analysis of 2-Μm InGaSb/GaSb Quantum Well Lasers Integrated Onto Silicon-on-Insulator (SOI) Waveguide Circuits Through an Al2O3 Bonding Layer

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

Lasing Characteristics of GaSb∕GaAs Self-Assembled Quantum Dots Embedded in an InGaAs Quantum Well

2.1 Μm InGaSb Quantum Well Lasers Exhibiting the Maximum Conversion Efficiency of 27.5% with Digitally Grown AlGaAsSb Barriers and Gradient Layers

Inas/Gaas Quantum-Dot Light Emitters Monolithically Grown On Si Substrates

Low-Threshold 1.3- $\mu$ M GaInNAs Quantum-Well Lasers Using Quaternary-Barrier Structures

Highly-Strained InGaAs/GaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Analysis of Structural Parameters on InGaAsSb/AlGaAsSb Quantum Well

Room-temperature Optically-Pumped GaSb Quantum Well Based VCSEL Monolithically Grown on Si (100) Substrate