Abstract:Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate limit in material downscaling for electronics, a frontier for establishing an entirely new field of one-dimensional quantum materials. Electronic and structural properties of chain-like InTe are essential for better understanding of device applications such as thermoelectrics. Here, we use scanning tunneling microscopy/spectroscopy (STM/STS) measurements and density functional theory (DFT) calculations to directly image the in-plane structural anisotropy in tetragonal Indium Telluride (InTe). As results, we report the direct observation of one-dimensional In1+ chains in InTe. We demonstrate that InTe exhibits a band gap of about 0.40 +-0.02 eV located at the M point of the Brillouin zone. Additionally, line defects are observed in our sample, were attributed to In1+ chain vacancy along the c-axis, a general feature in many other TlSe-like compounds. Our STS and DFT results prove that the presence of In1+ induces localized gap state, located near the valence band maximum (VBM). This acceptor state is responsible for the high intrinsic p-type doping of InTe that we also confirm using angle-resolved photoemission spectroscopy.

First-Principles Study on the Luminescence Property of In-Doped Znte

First-Principles Study of Defect Properties of Zinc Blende Mgte

CdZnTe Energy Levels Induced by Doping of Indium

Influence of in Dopant on Pl Spectra of Cdznte Crystals

Resonant Nature of Intrinsic Defect Energy Levels in Pbte Revealed by Infrared Photoreflectance Spectroscopy

Growth of in Doped Cdznte by Vertical Bridgman Method and the Effect of in on the Crystal Properties

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Dislocation-induced IR absorption and photoluminescence emission in Cd0.96Zn0.04Te

Study of Dislocations in Cdznte Single Crystals

First-Principles Study on the Electronic Structures and Structural Stability of Cd-Doped Zno

First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO

Impurity–defect emission from undoped Cd1–x Zn x Te single crystals near the fundamental absorption edge

Unusual Violet Photoluminescence in Indium-Doped ZnO Nanowires

Influences of Cd-Substitution and Intrinsic Vacancies on the Electronic Structures and Optical Properties of Zno Nanotubes

Theoretical studies on thermodynamic stabilities and luminescent mechanisms of defects and lanthanide ions in BaZrSi3O9

Dislocation-mediated Coupling Mechanism Between the Microstructural Defects and Te Inclusions in CdZnTe Single Crystals

Electronic Structures of Defects in Zno: Hybrid Density Functional Studies

Defect Levels of 3dn Transition-Metal Series in Wide-Gap Oxide and Fluoride Insulators: A First-Principles Study

Defect energy levels and persistent luminescence in Cu-doped ZnS

Intrinsic defects and mid-gap states in quasi-one-dimensional Indium Telluride

The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation