Structural and Optical Properties of ZnO Nanoneedle Grown by Catalyst-free Synthesis
Dong-qi YU,Jiao LI,Hao HU,Jing-chang SUN,He-qiu ZHANG,Zi-wen ZHAO,Qiang FU,Guo-tong DU,Li-zhong HU
2008-01-01
Chinese Journal of Luminescence
Abstract:In recent years, semiconductor nanostructures have attracted much attention due to their potential application in a wide range of advanced devices. ZnO nanostructure has become a promising candidate for applications in functional oxide-based, blue-ultraviolet light emitting, field-effect transistor and transparent conductivity, because of its large direct wide band gap of 3.37 eV and large exciton binding energy of 60 meV. Furthermore, ZnO nanostructure can be used for electromechanical coupled sensor, transducers and biomedical applications. Many researchers reported the synthesis of ZnO nanostructures by a vapor-liquid-solid (VLS) mechanism. This approach is the most widely used technique for synthesizing aligned ZnO nanostructures, in which the assistance of metal catalysts, such as Au, Co, Cu etc. are frequently chosen. Because these catalysts commonly are also unfavorable impurities in the product, so it is necessary to exploit some catalyst-free growth techniques of ZnO nanostructures. Most of the related works were focused on the silicon and sapphire substrates using VLS technique, however there was no report of catalyst-free fabricating ZnO nanostructure on InP using pulsed laser deposition (PLD) technique. In this paper, we employed InP wafers as the substrates, a undoped thin ZnO film with thickness of 20~30 nm was predeposited on InP substrate surface by PLD as the buffer layer. The predeposited ZnO film assembled uniform ZnO islands on the InP substrate surface. ZnO nanoneedle-type nanostructure were successfully synthesized on indium phosphide (InP) (100) substrates. It illuminates that the using of catalyst is not absolutely necessary in the growth of ZnO nanostructures. The morphologic, crystal structural and optical pro-perties were characterized with scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL) spectrum analytic approaches, respectively. SEM pattern showed that the ZnO nanoneedle was obtained in high yield and high-quality and had a preferential growth orientation that was perpendicular to the substrate surface and are well separated from each other. From the XRD scan results, a strong diffraction peak was observed at 34.5°, attributing to the ZnO (002) plane, indicating that the growth direction is well-oriented along c-axis and has highly crystalline quality. A typical PL spectrum, measured at room temperature, showed a strong free-excition emission at 379 nm with a full width at half maximum (FWHM) value of 13.5 nm, and a weak deep level (DL) emission at 484 nm, the intensity ratio of free-excition emission relative to DL emission was 11∶1, indicating that the ZnO nanoneedles produced in this experiment are of high optical quality. The simple and efficient method to fabricate ZnO nanoneedle has the following advantages: low cost, potential for wafer-scale production, and guaranteeing high-purity of ZnO. Therefore, this method may benefit in the applications for nano-devices.