Abstract:Optical crystals grown by Czochralski technique from a solute-rich melt usually suffer defects of melt inclusion or bubble core defects, which severely affect the optical, thermal and mechanical properties of the material. It is well known that the formation of melt inclusion or bubble core is highly related to species distribution in the growth system especially at the solidification interface and the shape of the growth interface. This paper has examined the flow pattern and solidification interface changes by changing the forced convection, e.g., crystal rotation and by changing the natural convection, e.g., inserting a horizontal disk plate. The relative effect of fluid-flow convection modes in the melt associated with crystal rotation rate is represented by a dimensionless parameter, Gr/Re-2. Increasing the rotation rate will cause the solid-liquid interface change from the convex shape to concave. When the crystal rotation rate is relatively low and natural convection is strong, Gr/Re-2 is large. In this case, the concentration of species pertinent to melt inclusion moves down along the axis of rotation. When the crystal rotation rate is increased, the value of Gr/Re-2 decreases. The precipitated composition spreads over the growing interface may then be swiped away from the growth interface by increased crystal rotation. Melt inclusion-free crystals can thus be obtained. The relationship between Gr/Re-2 and growth interface shape change is achieved by numerical simulations. The stagnant point location as a function of crystal rotation is also presented, which shows that the stagnant point moves outward by increasing Reynolds number and/or reducing Grashof number. From such understanding, the interface shape and melt inclusion position can then be controlled through control of Gr/Re-2 in the growth system. Many times, it is, however, not practical in the experiments to use a high rotation rate for optical crystal growth since high rotation rate will introduce the striation defects. A new design to reduce natural convection is then proposed to improve the effect of crystal rotation and to control the solidification interface shape. Numerical simulations have been performed to demonstrate the possibility of the new design. Results show that such design is very effective and practical to control the melt inclusion and the solidification interface shape.

Investigation of Influence of Accelerated Rotating Wave on Solid-Liquid Interface in Cdznte Acrt Crystal Growth

Effect of Variable Crucible Dropping Rate on Solid‐liquid Interface in CdZnTe Crystal Growth

Numerical analysis of Cd1−xZnxTe crystal growth by the vertical Bridgman method using the accelerated crucible rotation technique

Influence of Enhancement of Heat Exchange on CdZnTe Crystal Growth Process

Numerical Study of Effect of ACRT Convection on L-S Interface During Bridgman Crystal Growth

Numerical Modeling of CdZnTe-VBM Crystal Growth

Effects of Pulling Velocity on Interface Dynamics and Solute Segregation During Crystal Growth

The Effects Of Acrt On The Growth Of Znte Crystal By The Temperature Gradient Solution Growth Technique

Numerical Analysis of Solid–liquid Interface Shape During Large-Size Single Crystalline Silicon with Czochralski Method

Numerical analysis on Hg1−xCdxTe growth by ACRT-VBM

Investigation of Solute Segregation in CZT-LPVB with Finite Element Analysis Method

Modification of Growth Interface of CdZnTe Crystals in THM Process by ACRT

Investigation of effect of constitutional supercooling and solute segregation in CZT-LPVB with finite element analysis method

Control Of Flow Pattern And Solidification Interface Shape In An Induction Heated Czochralski Crystal Growth System

Characterization of Cdznte Crystal Grown by Bottom-Seeded Bridgman and Bridgman Accelerated Crucible Rotation Techniques

Studies on Thermal and Interface Optimization for CdZnTe Crystals by Unseeded Traveling Heater Method

Local and Global Simulations of Bridgman and Liquid-Encapsulated Czochralski Crystal Growth

A Modified Vertical Bridgman Method for Growth of High-Quality Cd1−xZnxTe Crystals

Numerical Study of ACRT in the THM Growth of CdZnTe Crystals

A modified vertical Bridgman method for growth of high-quality Cd<sub>1−x</sub>Zn<sub>x</sub>Te crystals

The Study on Growth Interface of Floating Zone Silicon Crystal