Abstract:Vacuum micro/nano electronic devices possess merits of radiation hardness, temperature tolerance, high working frequency and output power. It's regarded as the promising candidates for the application on ultra-high speed transistor [1, 2], portable and fast-switch X-ray source [3], free electron laser [4], field emission display [5] and so on. In the developing of modern vacuum electronic, to achieve integrated compact addressable and uniform devices with low driving voltage is one of the important issues. Nowadays, the most studied devices structure is a micro/nano emitter with an integrated control gate, so call “gated” device. The separation between the gate and the cathode is controlled in sub-micro scale, even narrower to nanoscale (<; 100 nm) [2, 6]. The fabrication of vacuum micro/nano electronic devices is based on integrated circuit (IC) compatible techniques, i.e., lithography, etch, and metallization. However, some specific procedures are needed for realizing the uniform integrated gated devices. Among them, the forming of the precisely defined device structures without using aligned-lithography (so call “self-aligned” procedure) is the one that be widely used. This self-aligned technique ensures the localized, precise and large area structure defining. The use of self-aligned process is one of the many innovations that led to the developments of vacuum micro/nano electronics in the past decades.

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