Abstract:The acidic (pKa ≈1.5–2.5) and hygroscopic nature of poly(3,4-ethylene dioxythiophene) polystyrene sulfonate, used as a common hole-injection layer in optoelectronic devices, has a detrimental effect on device stability and is associated with well established device failure mechanisms. In this work, a process with a high green index hole-injection layer material (V2O5) and low surface roughness (RMS roughness ≈1.3 nm) was developed for demonstrating a hybrid polymer–inorganic perovskite light-emitting diode. Test devices with the new hole-injection layer demonstrate nearly identical maximum current efficiencies (4.23 vs 4.19 cd/A), and luminous efficacies (2.99 vs 2.32 lm/W) when compared to a control device fabricated with the conventional hole-injection layer. Furthermore, the peak brightness was achieved at a current density one-third of the value for the control device. To examine the transport of holes in the above hole-injection layer, we carried out device simulations based on a physical charge control model, including defect-assisted tunneling for hole injection. Close agreement for current–voltage characteristics is observed. Experimentally measured mobility in the device and measured radiative lifetimes were found to be sufficient to achieve this agreement without resorting to the introduction of a sheet charge at the injection interface. Despite the use of a bulk-heterojunction device architecture, the model predicts high radiative recombination rates [≈5.6×1022/(cm3s)] in the emissive layer, consistent with the measured photophysical properties for the active film, suggesting effective passivation of non-radiative surface states.

Fine tuning hole injection for high-performance polyfluorene-based blue emitting device by adjusting work function of anode via deposition of CFx layer with proper ionization potential on indium tin oxide

Polarized Blue Polymer Light-Emitting Diodes Utilizing Rubbed Hole Injection Layers

Synthesis and performances of chelating electrophosphorescent polymers based on different ancillary ligands

Fine tuning the purity of blue emission from polydioctylfluorene by end-capping with electron-deficient moieties.

Polyfluorenes for Device Applications

High Brightness Fluorescent White Polymer Light-Emitting Diodes by Promoted Hole Injection via Reduced Barrier by Interfacial Dipole Imparted from Chlorinated Indium Tin Oxide to the Hole Injection Layer PEDOT:PSS.

Highly Efficient and Stable Blue Polymer Light Emitting Diodes Based on Polysilafluorenes with Pendent Hole Transporting Groups

Enhanced performance of blue OLED with water/alcohol soluble conjugated polymer as electron injection layer

Efficient 9-Alkylphenyl-9-pyrenylfluorene Substituted Pyrene Derivatives with Improved Hole Injection for Blue Light-Emitting Diodes

Improved Hole Injection And Transport Of Organic Light-Emitting Devices With An Efficient P-Doped Hole-Injection Layer

Enhanced Hole Injection in Organic Light-Emitting Devices by Using Fe3O4 As an Anodic Buffer Layer

Defect-assisted hole transport through transition metal oxide-based injection layers for passivated nanocrystalline CsPbBr3 emissive thin films: A combined experimental and modeling study

Polyethyleneoxide/Sodium Dodecyl Sulfate As Hole-Blocking/Electron-Transporting Layer For High-Performance Blue Polymer Light-Emitting Diode With Oxygen- And Moisture-Stable Aluminum Cathode

Synthesis of spiro[fluorene-9,9′-xanthene] derivatives and their application as hole-transporting materials for organic light-emitting devices

Superior Hole Injection Material PEGDT/TPF/PVDF with p-Doping Capability for Highly Efficient Solution-Processed Organic Light-Emitting Diode

Design of Deep Blue Electroluminescent Spiro-Polyfluorenes with High Efficiency by Facilitating the Injection of Charge Carriers Through Incorporation of Multiple Charge Transport Moieties

High-efficiency Blue-Emitting Organic Light-Emitting Devices with 4, 4′, 4″-Tris(n-carbazolyl)-triphenylamine As the Hole/exciton-Blocking Layer

Post Doping by Wet Deposition Process in Polymer Light-Emitting Diode Fabrication for Color Tuning and Performance Improving

Improving the Performance of Quantum Dot Light-Emitting Diodes by the Enrichment of a Fluorinated Component on Top of a Hole Transport Layer

Pyridine Vapor Annealing Induced Reversible Switching Emission and Enhanced Electroluminescent Performance of Poly(fluorene-co-dibenzothiophene-S,S-dioxide)

Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection