Abstract:III-V ferromagnetic semiconductor has attracted great attention as a potential application for spintronics due to a successful demonstration of spin injection from ferromagnetic GaMnAs into semiconductor. A conclusion so far in the GaMnAs system is the maximum incorporation of Mn up to ~ 5% with ferromagnetism below ~110 K. Higher Mn incorporation produces MnAs precipitates, and which has rather decreased the Curie temperature. In the meantime, the authors have shown that another III-V system of GaMnN reveals room temperature ferromagnetism in structures grown by MBE using a single GaN precursor.[1] In the subsequent attempt to further enhance the carrier concentration in the matrix of GaMnN solid solution by codoping nonmagnetic doping element of Mg [2,3], however, the saturation magnetization has dramatically enhanced even with a very small Mn concentration, but magnetotransport could not be observed due to relatively high resistivity or the semiconducting behavior of the layers. In this study, we present a study on Be-codoped GaMnAs including ferromagnetism and magnetotransport at room temperature.

Magnetic Properties of Mn Doped Gan Grown Using Single Gan Precursor Via Molecular Beam Epitaxy

Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

The magnetic properties of Be-codoped GaMnN grown via molecular beam epitaxy

Studies on Structural and Magnetic Properties in Mn-Doped GaN

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Structural, Optical and Magnetic Properties of Ga1−xMnxN Films Grown by MOCVD

Magnetotransport of Be-doped GaMnAs

Structural and paramagnetic properties of dilute Ga1-xMnxN

Properties of Ferromagnetic Ga1-xMnxN Films Grown by Ammonia-MBE

Influence of Mn-Doped Content on Ferromagnetism of Ga 1− X Mn X N Film Grown by LP-MOVPE

Magnetic and Magneto-Transport Properties of Ga1−xMnxN Grown by MOCVD

Optical and Structural Properties of Mn-Implanted GaN Films

Nano-clusters structure and magnetic properties of high fluence Mn+ ion-implanted GaN

The Langevin Equation for a Quantum Heat Bath

Effect of Mn Concentration and Growth Temperature on Nanostructures and Magnetic Properties of Ge1−xMnx Grown on Si

GROWTH AND CHARACTERIZATION OF Be-CODOPED GaMnAs

Synthesis and Properties of Ga x Mn 1-x N films

Room-Temperature Ferromagnetism of Ga 1− X Mn X N Grown by Low-Pressure Metalorganic Chemical Vapour Deposition

Ab initio study of electronic and magnetic properties of the C-codoped Ga 1 − x Mn x N ( 10 1 ¯ 0 ) surface

Study on Preparation and Properties of Mn-Doped GaN Powders

Study on the Fabrication and Properties of GaN-Based Diluted Magnetic Semiconductors