Synthesis and Properties of Ga x Mn 1-x N films

R. Zhang,Y. Y. Yu,X. Q. Xiu,Z. L. Xie,S. L. Gu,B. Shen,Y. Shi,Y. D. Zheng

DOI: https://doi.org/10.1557/proc-831-e9.3

2005-01-01

Abstract:Mn-doped GaN films were grown by hydride vapor phase epitaxy(HVPE). structural measurements show that Mn may substitute Ga atoms in the GaN lattice. Ferromagnetism is observed in these HVPE grown Mn-doped GaN films, which may come from the GaxMn1-xN phase in the films.

What problem does this paper attempt to address?

Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

Xugao Cui,ZhiKuo Tao,Rong Zhang,Xuefei Li,Xiangqian Xiu,Zili Xie,Shulin Gu,Ping Han,Yi Shi,Youdou Zheng

DOI: https://doi.org/10.1063/1.2909545

IF: 4

2008-01-01

Applied Physics Letters

Abstract:Mn-doped GaN epitaxial films (Ga1-xMnxN) were grown on sapphire (0001) by metal organic chemical vapor deposition. Mn concentration was determined by energy dispersive spectrometry. For Ga1-xMnxN with x up to 0.027, no secondary phases except for GaN were detected by high resolution x-ray diffractometer. Raman scattering spectra show that the longitudinal optical phonon mode A(1)(LO) of Ga1-xMnxN shifts toward lower frequency with increasing Mn concentration due to substitutional Mn incorporation. Electron spin resonance (ESR) measurements were performed and highly anisotropic sixfold hyperfine line indicates that the ionized Mn2+ substitutes for Ga3+ ions. However, magnetometry reveals that all homogenous Ga1-xMnxN show paramagneticlike behaviors. From Brillouin function fit and ESR spectra, it is concluded that Mn ions are present as isolated paramagnetic centers. (c) 2008 American Institute of Physics.
Studies on Structural and Magnetic Properties in Mn-Doped GaN

Cui Xugao,Zhang Rong,Tao Zhikuo,Li Xin,Xiu Xiangqian,Xie Zili

2008-01-01

Abstract:Mn-doped GaN epitaxial films(Ga1-xMnxN)were grown on sapphire [0001] by metal organic chemical vapor deposition(MOCVD).Mn concentration was determined by energy dispersive spectrometry(EDS).For Ga1-xMnxN with x up to 0.027,no secondary phases except for GaN were detected by high resolution X-ray diffractometer(XRD).Raman scattering spectra shows that the longitudinal optical phonon mode A1(LO)of Ga1-xMnxN shifts towards lower frequency with increasing Mn concentration due to substitutional Mn incorporation.Room temperature electron spin resonance(ESR)measurements are performed and highly anisotropic six-fold hyperfine line indicates that the ionized Mn2+ substitutes for Ga3+ ions.However,superconductor quantum interference device(SQUID)magnetometry reveals that all homogenous Mn-doped GaN films show paramagnetic-like behaviors.From Brillouin function fit and ESR spectra,it is concluded that Mn ions are present as isolated paramagnetic centers.
Structural and paramagnetic properties of dilute Ga1-xMnxN

Wiktor Stefanowicz,Dariusz Sztenkiel,Bogdan Faina,Andreas Grois,Mauro Rovezzi,Thibaut Devillers,Francesco d'Acapito,Andrea Navarro-Quezada,Tian Li,Rafal Jakiela,Maciej Sawicki,Tomasz Dietl,Alberta Bonanni

DOI: https://doi.org/10.1103/PhysRevB.81.235210

2011-07-21

Abstract:Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction, and extended x-ray absorption fine structure studies do not reveal any crystallographic phase separation and indicate that Mn occupies Ga-substitutional sites in the Mn concentration range up to 1%. The magnetic properties as a function of temperature, magnetic field and its orientation with respect to the c-axis of the wurtzite structure can be quantitatively described by the paramagnetic theory of an ensemble of non-interacting Mn$^{3+}$ ions in the relevant crystal field, a conclusion consistent with the x-ray absorption near edge structure analysis. A negligible contribution of Mn in the 2+ charge state points to a low concentration of residual donors in the studied films. Studies on modulation doped p-type (Ga,Mn)N/(Ga,Al)N:Mg heterostructures do not reproduce the high temperature robust ferromagnetism reported recently for this system.

Materials Science
Structural, Optical and Magnetic Properties of Ga1−xMnxN Films Grown by MOCVD

X. L. Yang,Z. T. Chen,L. B. Zhao,W. X. Zhu,C. D. Wang,X. D. Pei,G. Y. Zhang

DOI: https://doi.org/10.1088/0022-3727/41/24/245004

2008-01-01

Abstract:In this paper, we have investigated the structural, optical and magnetic properties of Ga1-xMnxN films grown by MOCVD. The valence band structure was analysed by the x-ray photoelectron spectroscopy (XPS) measurements. A different Fermi level shift behaviour was observed with increasing Mn composition in the GaN. This shift behaviour was attributed to the donor-like defects induced by the Mn doping in the heavily doped samples. The presence of these defects was further confirmed by the calthodoluminescence spectra. The additional peak around 2.0 eV in the heavily doped samples corresponds to the intra-d-shell transitions of Mn2+. This Mn2+ state was formed by trapping the electrons released from the donor-like defects, which is quite consistent with the XPS results. Finally, the magnetic properties were also discussed in combination with the above results.
Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Xugao Cui,Rong Zhang,Tao Zhang,Xin Li,Xiangqian Xiu,Zili Xie,Yi Zheng

DOI: https://doi.org/10.1088/0256-307x/26/3/038103

2009-01-01

Abstract:Mn-doped GaN epitaxial films were grown by metal organic chemical vapour deposition (MOCVD). Micro-structural properties of films are investigated using Raman scattering. It is found that with increasing Mn-dopants levels, longitudinal optical phonon mode A1 (LO) of films is broadened and shifted towards lower frequency. This phenomenon possibly derives from the difference in bonding strength between Ga-N pairs and Mn-N pairs in host lattice. In addition, optical properties of films are investigated using cathodoluminescence and absorption spectroscopy. Mn-related both emission band around 3.0eV and absorption bands around 1.5 and 2.95eV are observed. By studies on structural and optical properties of Mn-doped GaN, we find that Mn ions substitute for Ga sites in host lattice. However, carrier-mediated ferromagnetic exchange seems unlikely due to deep levels of Mn acceptors.
Properties of Ferromagnetic Ga1-xMnxN Films Grown by Ammonia-MBE

Saki Sonoda,Hidenobu Hori,Yoshiyuki Yamamoto,Takahiko Sasaki,Masugu Sato,Saburo Shimizu,Ken-ichi Suga,Koichi Kindo

DOI: https://doi.org/10.1109/TMAG.2002.803147

2002-05-27

Abstract:Using ammonia as nitrogen source for molecular beam epitaxy, the GaN-based diluted magnetic semiconductor Ga1-xMnxN is successfully grown with Mn concentration up to x~6.8% and with p-type conductivity. The films have wurtzite structure with substitutional Mn on Ga site in GaN. Magnetization measurements revealed that Ga1-xMnxN is ferromagnetic at temperatures higher than room temperature. The ferromagnetic-paramagnetic transition temperature, Tc, depends on the Mn concentration of the film. At low temperatures, the magnetization increases with increasing of magnetic field, implying that a paramagnetic-like phase coexists with ferromagnetic one. Possible explanations will be proposed for the coexistence of two magnetic phases in the grown films.

Materials Science
Study of Structures and Magnetic Properties of Single Crystalline HVPE–GaMnN Films

X. Q. Xiu,R. Zhang,B. B. Li,Z. L. Xie,L. Chen,B. Liu,P. Han,S. L. Gu,Y. Shi,Y. D. Zheng

DOI: https://doi.org/10.1016/j.jcrysgro.2006.04.006

IF: 1.8

2006-01-01

Journal of Crystal Growth

Abstract:We have grown single crystalline GaMnN films by a horizontal hydride vapor-phase epitaxy (HVPE) system. The structures and crystal quality were confirmed by XRD and Raman scattering measurements. The structure analysis indicated that we obtained uniform GaMnN solid-solution films; the Mn atoms were substituted for Ga sites and did not form Mn precipitates or clusters. The superconductor quantum interference device (SQUID) results show that the GaMnN films without the phase separation exhibit paramagnetic properties.
Magnetic and Magneto-Transport Properties of Ga1−xMnxN Grown by MOCVD

Xuelin Yang,Zhitao Chen,Jiejun Wu,Yaobo Pan,Yan Zhang,Zhijian Yang,Tongjun Yu,Guoyi Zhang

DOI: https://doi.org/10.1016/j.jcrysgro.2007.04.029

IF: 1.8

2007-01-01

Journal of Crystal Growth

Abstract:The Ga1−xMnxN epitaxial films were grown by metalorganic chemical vapor deposition (MOCVD) with tricarbonyl (methycyclopentadienyl) manganese ((MCP)2Mn) as dopant source. Magnetic measurements indicate that the films are n-type conductivity (x=0.01), ferromagnetic ordering with Curie temperature above room temperature. The magnetic moment per Mn atom decreases when the Mn concentration changes from 0.01 to 0.03. Magneto-transport properties were performed in the temperature range of 2–300K. The magneto-resistance (MR) changes from negative effect to positive effect with increasing temperature. The negative MR effect at low temperature is due to the reduction of the magnetic scattering of the Mn ions under the applied magnetic field. Furthermore, the zero-field-cooled (ZFC)/field-cooled (FC) and MR behavior at low temperature confirm that the ferromagnetism and paramagnetism coexist in Ga1−xMnxN films.
Room-Temperature Ferromagnetism of Ga 1− X Mn X N Grown by Low-Pressure Metalorganic Chemical Vapour Deposition

Chen Zhi-Tao,Su Yue-Yong,Yang Zhi-Jian,Zhang Yan,Zhang Bin,Guo Li-Ping,Xu Ke,Pan Yao-Bao,Zhang Han,Zhang Guo-Yi

DOI: https://doi.org/10.1088/0256-307x/23/5/061

2006-01-01

Abstract:Epitaxial films of Ga1-xMnxN have been grown on c-sapphire substrates by low-pressure metal-organic vapour phase epitaxy. The samples show ferromagnetic behaviour up to a temperature of T = 380K with hysteresis curves showing a coercivity of 50-100 Oe. No ferromagnetic second phases and no significant deterioration in crystal quality with the incorporation of Mn can be detected by high-resolution x-ray diffraction. The result of x-ray absorption near-edge structures indicates that Mn atoms substitute for Ga atoms. The Mn concentrations of the layers are determined to reach x = 0.038 by proton-induced x-ray emission.
Optical and Structural Properties of Mn-Implanted GaN Films

Xu J.,Li J.,Zhang R.,Xiu X.Q.,Lu D.Q.,Gu S.L.,Shen B.,Shi Y.,Zheng Y. D.

DOI: https://doi.org/10.1557/proc-693-i3.43.1

2001-01-01

MRS Proceedings

Abstract:The optical and structural properties of Mn-implanted GaN films have been investigated. The films studied were grown by metal organic chemical vapor deposition (MOCVD), with Mn implanted in 150 KeV, which can offer many distinguished advantages compared with other doping methods. A new energy band with a minimum at 2.9 eV in the reflectance spectra has been observed. The yellow band emission was greatly decreased according to the result of photoluminescence. The structure analysis revealed that the Mn doped sample has good crystal quality as the pure GaN after annealed. And further discussions on the role of Mn in GaN: Mn films have been presented.
Influence of Mn-Doped Content on Ferromagnetism of Ga 1− X Mn X N Film Grown by LP-MOVPE

Zhang Bin,Yao Shu-De,Wang Kun,Ding Zhi-Bo,Chen Zhi-Tao,Su Yue-Yong,Zhang Guo-Yi,Ma Hong-Ji,Nie Rui,Zhang Ya-Wei

DOI: https://doi.org/10.1088/0256-307x/23/6/063

2006-01-01

Abstract:The diluted magnetic semiconductor Ga1−xMnxN was achieved by low-pressure metal organic vapour-phase epitaxy (LP-MOVPE). Proton-induced x-ray emission was employed non-destructively, quickly and accurately to determine the Mn-doped content. The magnetic property was measured by a superconducting-quantum-interference-device (SQID) magnetometer. Apparent ferromagnetic hysteresis loops measured at or above room temperature are presented. No ferromagnetic secondary phases were detected by high-resolution x-ray diffraction. The experimental results show that the ferromagnetic signal firstly decreases and then increases with the increasing Mn-doped content from 0.23% to 4.69% and it is the weakest when Mn content is 0.51%. The annealing treatment could make the ferromagnetic property stronger.
Optical Properties of Gamnn Films Grown by Metal-Organic Chemical Vapor Deposition

Xing Hai-Ying,Fan Guang-Han,Yang Xue-Lin,Zhang Guo-Yi

DOI: https://doi.org/10.7498/aps.59.504

IF: 0.906

2010-01-01

Acta Physica Sinica

Abstract:Optical absorption spectra for a series of GaMnN samples with different Mn content grown by metal-organic chemical vapor deposition have been investigated. Compared with GaN, the absorption coefficient of Ga1-xMnxN increases in the UV region and an absorption peak can be observed near 144 eV. In addition, the absorption coefficient increases with the increase of the Mn content. The experimental results are in excellent agreement with theoretical data based on density functional theory. Associated with theoretical data, the absorption peak near 144 eV is assigned to 5T2→5E internal transition between the e state and the t2 state of Mn3+ ion.
Influence of Si Co-Doping on Magnetic, Electrical and Optical Properties of Ga1–x Mn X N Film Grown by MOCVD

FaFa Zhang,XueLin Yang,YuHao Zhang,XianZhe Jiang,ZhiYuan Lin,ZhiTao Chen,Ding Li,YueBin Tao,CunDa Wang,GuoYi Zhang

DOI: https://doi.org/10.1007/s11431-011-4438-5

2011-01-01

Science China Technological Sciences

Abstract:A detailed study is presented on magnetic, electrical and optical properties of Ga 1− x Mn x N: Si film grown by metal organic chemical vapor deposition (MOCVD) with high-purity SiH 4 as the Si dopant source. The room-temperature field dependence magnetization and zero-field-cooled (ZFC)/field-cooled (FC) measurements indicate that the film remains room-temperature ferromagnetism and it declines slightly after Si co-doping. However, room-temperature Hall measurements indicate that the electrical property of the film improves distinctly compared with Ga 1− x Mn x N. Cathode luminescence (CL) measurements show an obvious enhancement in luminous property and different peak strength changes at three different positions. Therefore, we demonstrate that Fermi level and the electron structure of Mn atoms will change with variation of the impurities co-doped and the intrinsic defects and this may be related with room-temperature ferromagnetism and the other corresponding properties of the film.
Local Structure Around Mn Atoms in Cubic (ga,mn)n Thin Films Probed by Fluorescence Extended X-Ray Absorption Fine Structure

B He,XY Zhang,SQ Wei,H Oyanagi,SV Novikov,KW Edmonds,CT Foxon,GE Zhou,YB Jia

DOI: https://doi.org/10.1063/1.2168228

IF: 4

2006-01-01

Applied Physics Letters

Abstract:The local structures of Mn atoms incorporated in zinc-blende (Ga,Mn)N thin films have been investigated by fluorescence extended x-ray absorption fine structure analysis (EXAFS). The EXAFS results provide direct evidence for the substitution of the majority of Mn atoms in Ga sites of GaN at 2.5% doping. On the other hand, the simulation result of 10% doped (Ga,Mn)N shows that secondary phases—Mn clusters—are formed. The long-range-order crystal structures of (Ga,Mn)N are also studied by x-ray diffraction. The broadening of rocking curve of 10% doped (Ga,Mn)N is attributed to the existence of mosaic block, which resulted from the earlier mentioned secondary phases. How Mn dopants affect the properties of GaN films is discussed as well.
Optical Characteristics and Magnetism of Mn+-Ion-Implanted MOCVD-GaN Film

李杰,张荣,修向前,卢佃清,俞慧强,顾书林,沈波,郑有炓

DOI: https://doi.org/10.3321/j.issn:0253-4177.2003.12.009

2003-01-01

Abstract:(Ga,Mn) N films are prepared by Mn+ ion implanted into GaN epilayers grown by metal organic chemical vapor deposition (MOCVD). The properties of (Ga,Mn) N films are studied by optical and magnetic measurements. The photoluminescence results show that the yellow luminescence is greatly decreased in heavily Mn-doped GaN films. A new absorption band formed in the reflectance spectra and absorption coefficient spectra indicates the charge transfer and conduction band-Mn acceptor level transition process. Furthermore, a 30±5 meV redshift is observed in Mn-doped samples. Vibrating sample magnetometer (VSM) results prove that heavily Mn-doped GaN films have the ferromagnetic properties at room temperature.
Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Ting Liang,Jianjun Tang,Jijun Xiong,Yong Wang,Chenyang Xue,Xujun Yang,Wendong Zhang

DOI: https://doi.org/10.1016/j.vacuum.2010.01.054

2011-01-01

Abstract:Hexagonal-GaN heteroepitaxy layers have been grown on Si(111)substrate by MOCVD.The structure,morphology and optical properties of GaN epilayer is analyzed and characterized by various analysis method such as optical microscope,AFM,SEM,X-ray diffraction(XRD),and Raman spectra,etc.Test results show that the crystal reveals the wurtzite structure with the(0002)crystal orientation and the heteroepitaxial growth of GaN has good single crystal quality,good directing property,smooth surface without crack.The Raman peaks of E2(high)and A1(LO)phonon mode have red shift according to relaxed GaN,which might be related to the tensile stress in GaN layer.But the AO phonon mode of Si have blue shift as its eigen frequency which shows the Si substrate suffered compressive stress.
The Langevin Equation for a Quantum Heat Bath

S. Attal,A. Joye

DOI: https://doi.org/10.48550/arXiv.math-ph/0612055

2006-12-17

Abstract:We compute the quantum Langevin equation (or quantum stochastic differential equation) representing the action of a quantum heat bath at thermal equilibrium on a simple quantum system. These equations are obtained by taking the continuous limit of the Hamiltonian description for repeated quantum interactions with a sequence of photons at a given density matrix state. In particular we specialise these equations to the case of thermal equilibrium states. In the process, new quantum noises are appearing: thermal quantum noises. We discuss the mathematical properties of these thermal quantum noises. We compute the Lindblad generator associated with the action of the heat bath on the small system. We exhibit the typical Lindblad generator that provides thermalization of a given quantum system.

Mathematical Physics
Structure of Mnxge1-X Dilute Magnetic Semiconductor Films

Sun Yu,Sun Zhi-Hu,Zhu San-Yuan,Shi Tong-Fei,Ye Jian,Pan Zhi-Yun,Liu Wen-Han,Wei Shi-Qiang

DOI: https://doi.org/10.7498/aps.56.5471

IF: 0.906

2007-01-01

Acta Physica Sinica

Abstract:The structure of Mn-x Ge1-x dilute magnetic semiconductor thin films prepared by magnetron co-sputtering has been studied by X-ray diffraction (XRD) and X-ray absorption fine structure (XAFS) techniques. The XRD results show that in the Mn-x Ge1-x thin film with low Mn doping concentration (x = 0.070) only diffraction peaks attributed to crystalline Ge can be observed. In samples with high Mn doping concentrations ( x = 0.250, 0.360), the secondary phase Ge-3 Mn-5 appears, and its content enhances with Mn doping concentration. The XAFS results indicate that for the Mn-0.07 Ge-0.93 thin film, Mn atoms are mainly incorporated into the Ge lattice and located at the substitutional sites of Ge atoms with the ratio of 75%, while for the Mn-0.25 Ge-0.75 and Mn-0.36 Ge-0.64 samples, most of the Mn atoms are aggregated to form Ge-3 Mn-5.
Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition

邢海英,徐章程,崔明启,谢玉芯,张国义,Xing Hai-Ying,Xu Zhang-Cheng,Cui Ming-Qi,Xie Yu-Xin,Zhang Guo-Yi

DOI: https://doi.org/10.1088/1674-1056/23/10/107803

2014-01-01

Chinese Physics B

Abstract:Metal-organic chemical vapor deposition (MOCVD) grown ferromagnetic GaMnN films are investigated by photoluminescence (PL) measurement with a mid-gap excitation wavelength of 405 nm. A sharp PL peak at 1.8 eV is found and the PL intensity successively decreases with the addition of Mn, in which the Mn concentration of sample A is below 1% ([Mn](A) = 0.75%) but its PL intensity is stronger than other samples'. The 1.8-eV PL peak is attributed to the recombination of electrons in the t(2) state of the neutral Mn3+ acceptor with holes in the valence band. With Mn concentration increasing, the intensity of the PL peak decreases and the magnetic increment reduces in our samples. The correlation between the PL peak intensity and ferromagnetism of the samples is discussed in combination with the experimental results.
Raman Scattering and Ferromagnetism of (ga, Mn)N Films Grown by MOCVD

Xuelin Yang,Jiejun Wu,Zhitao Chen,Yaobo Pan,Yan Zhang,Zhijian Yang,Tongjun Yu,Guoyi Zhang

DOI: https://doi.org/10.1016/j.ssc.2007.05.012

IF: 1.934

2007-01-01

Solid State Communications

Abstract:In this letter, Raman spectra for a series of (Ga, Mn)N samples with different Mn concentration grown by MOCVD have been investigated. A new vibrational mode at 577 cm(-1) obtained is assigned to the local vibrational mode (LVM) of Mn substituting the Ga site. Another mode at 667 cm(-1) arises from vibrational mode of nitrogen vacancies-related defects. It is found that Mn doping increases the lattice disorder and other built-in defects such as the nitrogen vacancies. The room temperature ferromagnetism is not only dependent on the substitutional Mn content but also strongly related to these lattice disorder and negative defects in (Ga, Mn)N films. (c) 2007 Elsevier Ltd. All rights reserved.

Synthesis and Properties of Ga x Mn 1-x N films

Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

Studies on Structural and Magnetic Properties in Mn-Doped GaN

Structural and paramagnetic properties of dilute Ga1-xMnxN

Structural, Optical and Magnetic Properties of Ga1−xMnxN Films Grown by MOCVD

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Properties of Ferromagnetic Ga1-xMnxN Films Grown by Ammonia-MBE

Study of Structures and Magnetic Properties of Single Crystalline HVPE–GaMnN Films

Magnetic and Magneto-Transport Properties of Ga1−xMnxN Grown by MOCVD

Room-Temperature Ferromagnetism of Ga 1− X Mn X N Grown by Low-Pressure Metalorganic Chemical Vapour Deposition

Optical and Structural Properties of Mn-Implanted GaN Films

Influence of Mn-Doped Content on Ferromagnetism of Ga 1− X Mn X N Film Grown by LP-MOVPE

Optical Properties of Gamnn Films Grown by Metal-Organic Chemical Vapor Deposition

Influence of Si Co-Doping on Magnetic, Electrical and Optical Properties of Ga1–x Mn X N Film Grown by MOCVD

Local Structure Around Mn Atoms in Cubic (ga,mn)n Thin Films Probed by Fluorescence Extended X-Ray Absorption Fine Structure

Optical Characteristics and Magnetism of Mn+-Ion-Implanted MOCVD-GaN Film

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

The Langevin Equation for a Quantum Heat Bath

Structure of Mnxge1-X Dilute Magnetic Semiconductor Films

Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition

Raman Scattering and Ferromagnetism of (ga, Mn)N Films Grown by MOCVD