Effect of SiO_2 Sol on Performance of Electrodeposited CuInS_2 Thin Films

Zhu Liqun,Chen Haining,Li Weiping

DOI: https://doi.org/10.3321/j.issn:1000-6893.2009.11.033

2009-01-01

Abstract:CuInS2 (CIS) thin films with sufficient sulfur content and good morphology are hard to be grown by the present electrodeposition technique. In order to deal with the problem,Cu-In-S precursor thin films are prepared on ITO glass by the one-step electrodeposition technique in the electrolyte with SiO2 sol. The electrolytic bath used for the preparation of the thin films consists of metal salts,sodium thiosulfate (Na2S2O3) and various concentrations of SiO2 sol. Then the Cu-In-S precursor thin films are annealed in air-atmosphere to ensure adequate crystallization of the CuInS2 thin films. Samples are characterized using X-ray diffraction(XRD),scanning electron microscopy(SEM),energy dipersive spectroscopy(EDS) and open potential. It is found that films with higher crystallinity are achieved when the concentration of SiO2 sol is 4 mL/L. Besides,the morphology,composition,and photoresponse performance are improved by adding SiO2 sol in the electrolyte. The result of the investigation indicates that the performance of the CIS thin films can be improved by adding SiO2 sol in the electrolyte,especially when the concentration of the SiO2 is 4 mL/L.