Abstract:The continuous decrease in feature size in the production of electronic chips has two major consequences for silicon wafers: (i) processing conditions for slicing and grinding operations need to be optimized and (ii) surface damage imposed by wafer handling and transport needs to be minimized. Cultivating a deeper understanding of the subsurface implications of contact, in particular during scratching, is necessary to achieve these goals. The active subsurface micro-deformation mechanisms, including phase transformations and crack formation, can only be measured post-scratch. On the other hand, numerical models are free of experimental constraints and can therefore serve an instrumental role in uncovering the active deformation mechanisms during scratching. However, model identification and validation with experimental data is essential for reliable simulation results. Therefore, in this paper, a numerical scratch model consisting of a continuum particle methodology combined with a large strain inelastic constitutive model is exploited, whereby the parameters are identified from indentation data. The numerical-experimental results are next compared for a range of micro-scratch tests. The experimental micro-scratch device was mounted inside a scanning electron microscope to perform in situ scratch experiments. The real-time observations at the scratched surface allowed to assess and exclude possible experimental artifacts. The simulations demonstrate the ability to investigate the evolution of the phase transformations underneath the scratched surface and relate this to the hydrostatic pressure. Notably, at the simulated subsurface phase boundary, hydrostatic tension was found which is expected to play an important role in median crack formation, as often reported in the literature. For the simulation and experiments, the steady state segments are compared and it was found that the model accurately reproduces the substantial surface recovery due to the Si-II → Si-a phase transformation. Additionally, the simulated and experimental surface cross-sectional profiles for normal scratching loads of 30, 40 and 50 mN are in adequate agreement.

Micro-Raman Analysis on Scratch of Si Surface Modified by Ion Implantation

Numerical and experimental investigation on ductile deformation and subsurface defects of monocrystalline silicon during nano-scratching

Improvement mechanism of brittle-plastic transition and residual stress in scratching 4H-SiC implanted by hydrogen ions

Surface and Interface Properties of Ion Implanted 4H-Silicon Carbide

Hybrid micro/nano-structure formation by angular laser texturing of Si surface for surface enhanced Raman scattering.

One-Step femtosecond laser irradiation of Single-Crystal Silicon: Evolution of Micro-Nano structures and damage investigation

Sub-Micron Imaging Of Sub-Surface Nanocrystalline Structure In Silicon

Depth Profiling by Raman Spectroscopy of High-Energy Ion Irradiated Silicon Carbide

A Study on the Surface Quality and Damage Properties of Single-Crystal Silicon Using Different Post-Treatment Processes

Direct observation and quantification of nanosecond laser induced amorphization inside silicon

Influence of Anisotropy on Material Removal and Deformation Mechanism Based on Nanoscratch Tests of Monocrystal Silicon

On the deformation mechanism of SiC under nano-scratching: An experimental investigation

Revealing Silicon Crystal Defects by Conductive Atomic Force Microscope

Nanomechanical Properties of Single-Crystalline Silicon Wafer Irradiated by High-Energy Femtosecond Laser Pulses

Laser Desorption from and Reconstruction on Si(100) Surfaces Studied by Scanning Tunneling Microscopy

Scratch Types and Damage Thresholds of Fused Silica

Modifying single-crystal silicon and trimming silicon microring devices by femtosecond laser irradiation

Atomistic understanding of the subsurface damage mechanism of silicon (100) during the secondary nano-scratching processing

Experimental-numerical analysis of silicon micro-scratching

Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates

Fundamental Understanding of the Deformation Mechanism and Corresponding Behavior of RB-SiC Ceramics Subjected to Nano-Scratch in Ambient Temperature