Abstract:Though photoluminescence (PL) of Si quantum dots (QDs) has been known for decades and both theoretical and experimental studies have been extensive, their luminescence mechanism has not been elaborated. Several models have been proposed to explain the mechanism. A deep insight into the origin of light emissions in Si QDs is necessary. This work calculated the ground- and excited state properties of hydrogenated Si QDs with various diameters, including full hydrogen passivation, single Si Created by potrace 1.16, written by Peter Selinger 2001-2019 O ligands, single epoxide and coexisting SiO and epoxide structures in order to investigate the dominant contribution states for luminescence. The results revealed that even a single oxygen atom in hydrogenated Si QDs can dramatically change their electronic and optical properties. Intriguingly, we found that a size-independent emission, the strongest among all possible emissions, was induced by the single SiO passivated Si-QDs. In non-oxidized Si-QDs exhibiting a core-related size-tunable emission, the luminescence properties can be modulated by the ligands of Si QDs, and a very small number of oxygen ligands can strongly influence the luminescence of nanocrystalline silicon. Our findings deepen the understanding of the PL mechanism of Si QDs and can further promote the development of silicon-based optoelectronic devices.

Multiple Mechanism Model for Photoluminescence from Oxidized Porous Si

Photoluminescence and Photoluminescence Excitation Mechanisms for Porous Silicon and Silicon Oxynitride

Photoluminescence Mechanism For Blue-Light-Emitting Porous Silicon

Study of Photoconductivity and Photoluminescence of Organic/porous Silicon Complexes

The Influence of Microstructure on Optical Properties of Porous Silicon

Photoluminescence of Ozone Oxidized and Hf Etched Porous Silicon and the Multiple Source Quantum Well Model

Light-emitting Mechanism Conversion in C60-coupled Porous Si Systems

Photoluminescence Peak Energy Evolution for Porous Silicon During Photo-Oxidation and Gamma -Ray Oxidation

Effect of post-treatment processes on the photoluminescence of porous silicon

Two-peak Photoluminescence and Light-Emitting Mechanism of Porous Silicon

Evolution of photoluminescence in laser illuminating porous silicon

Relationships Between Photoluminescence Spectra and Porosity of Porous Silicon

MECHANISMS FOR PHOTOLUMINESCENCE FROM NANOSCALE SILICON/SILICON OXIDE SYSTEMS

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Variation of Double-Peak Structure in Photoluminescence Spectra from Porous Silicon with Excitation Wavelength

Luminescence Mechanism in Hydrogenated Silicon Quantum Dots with a Single Oxygen Ligand

Photoluminescence of oxidized porous silicon under UV-light illumination

NONDEGRADING PHOTOLUMINESCENCE IN POROUS SILICON

Light Emission from Nanoscale Si/Si Oxide Materials.

Photoluminescence and Raman Spectroscopy Study on Oxidized Free-Standing Porous Si

Stabilized Electronic State and Its Luminescence at the Surface of Oxygen-Passivated Porous Silicon