The differences in bonding properties and electrical, thermal conductivity between the preferred crystallographic orientation interface of Cu 3 Sn/Cu
Jieshi Chen,Xiao He,Zhixin Hou,Xinyu Wang,Xuerong Shi,Xin Ye,Hao Lu,Kai Xiong,Shuye Zhang
DOI: https://doi.org/10.1016/j.surfin.2024.104152
IF: 6.2
2024-03-07
Surfaces and Interfaces
Abstract:First-principles calculations based on Density-Functional theory and Semi-classical Boltzmann thermal transport theory have been applied to research the interfacial stability, electronic structures, bonding properties, and thermoelectric transport properties of different preferred crystallographic orientation interface of Cu 3 Sn/Cu. All interface models proved to have stable structures, the interfacial ideal adhesion of works of Cu 3 Sn ( 02 ̄5 )/Cu (042) interface, Cu 3 Sn (100)/Cu (100) interface, and Cu 3 Sn ⊥Cu (100) interface are 1.956 J/m 2 , 1.182 J/m 2 , and 2.126 J/m 2 , respectively. The newly formed chemical bonds at the interface exhibit ionic and covalent properties. Moreover, the electrical conductivity and thermal conductivity of 16.787 × 10 8 S · m −1 and 1.136 × 10 4 W · m −1 · K −1 at 300 K for the Cu 3 Sn ⊥Cu (100) interface are superior than the other two Cu 3 Sn/Cu interfaces.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films