Study of Electronic Structure, Elastic and Thermodynamic Properties of Cu2MgSnS4 under Different Pressures

H. J. Hou,Su Fan,H. Y. Wang,W. X. Chen,X. W. Lu,S. R. Zhang,L. H. Xie
DOI: https://doi.org/10.15251/cl.2024.212.189
2024-01-01
Chalcogenide Letters
Abstract:The electronic structure, elastic and thermodynamic properties of Cu2MgSnS4 was studied based on density functional theory (DFT). The results show that Cu2MgSnS4 is a direct bandgap semiconductor. The B/G of Cu2MgSnS4 is greater than 1.75, indicating that Cu2MgSnS4 is a ductile material. Through the study of thermodynamic properties, it is found that the temperature increases, the bulk modulus B and Debye temperature Θ decrease, while the heat capacity CV, entropy S, Grüneisen constant γ and thermal expansion coefficient α increase, and the heat capacity is close to the Dulong-Petit limit. As the pressure increases, the bulk modulus B, Debye temperature Θ increases, while the entropy S, Grüneisen constant γ and heat capacity CV decrease.
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