CeO₂ Buffer with (200) Preferential Orientation on R-Cut Sapphire by a Solution Deposition Technique

Yao Hui Xue,Chang Sheng Deng,Quing Feng Li,De Sheng Ai,Xia Ming Dai

DOI: https://doi.org/10.4028/www.scientific.net/KEM.336-338.726

2007-01-01

Key Engineering Materials

Abstract:CeO2 coating with (200) preferred orientation, as a buffer layer on R-cut sapphire, is of crucial importance for successful deposition of YBCO coated superconductor. Chemical solution deposition (CSD), a non-vacuum technology that is relatively cheap and easy to scale up, has attracted great attention for preparation of large area coatings. However, achieving certain texture in CeO2 on R-cut sapphire by CSD remains a challenge. In this paper, CeO2 coatings on R-cut sapphire were prepared with CSD and characterized with X-ray diffraction (XRD) and scanning electron microscopy (SEM). By using cerium salt as the precursor and carefully formulating the composition of deposition solutions, and combined with systematic study of the effect of depositing conditions, including particularly the heat treatment parameters, (200)-preferred orientation could be achieved in the coatings. Both dip coating and spin coating were used to prepare the coatings and it was found that with both techniques, CeO2 coatings with (200) preferred orientation were obtained by heat treatment at 1400 degrees C; and similar degree of orientation could be achieved at a higher Ce3+ precursor concentration with spin coating than with dip coating. The kinetics for the formation of the (200) orientation was briefly discussed.