Abstract:The authors investigate the character of the native defects (antisites, interstitials, vacancies and complexes of these or with impurities) in undoped and n- or p-type modulation-doped AlAs/GaAs superlattices by means of the developed recursion method. The presented electronic structures, and local and partial density of states give a detailed identification of these defects in various types of AlAs/GaAs superlattice. They have calculated the energies of highly localised electronic states and compared the results with the existing theoretical and experimental data. The stable states of the EL2 defect (AsGa-IAs pair) are studied under the assumption that it has the same atomic configuration as that in the bulk GaAs. With respect to the energy distribution, the electronic occupancy of various defects and of their atomic orbitals are determined; these show the occupied charge states directly. On the basis of these calculations, they find that the ionicity of a normal group III or V atom in AlAs/GaAs superlattices will always be positive when it becomes an interstitial and will be changed with a different type of doping, when it becomes an antisite. By considering the Coulombic nature of a Frenkel pair, some specific complexes between the native defects themselves or with the impurity Si are suggested. Finally, they describe the self-diffusion and the impurity diffusion mechanisms which occur in AlAs/GaAs superlattices with and without doping. Results are compared and contrasted with those of the bulk GaAs materials.

Intersubband Transition Rates Of Localized Electron-Phonon Interaction In Structural Defect Superlattices

The evolution of the localized interface optical-phonon modes in a finite superlattice with a structural defect

Influence of the Structural Defects on Localized Interface Optical-Phonon Modes in Periodically Layered Heterostructures

Localized Interface Optical-Phonon Modes in Two Coupled Semi-Infinite Superlattices

Localized Interface Optical Phonon Modes in A Semi-Infinite Superlattice with A Cap Layer

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

LOCAL ELECTRONIC-STRUCTURES OF THE NATIVE DEFECTS IN MODULATION-DOPED ALAS/GAAS SUPERLATTICES

Theory of Light Scattering by Longitudinal-Acoustic Phonons in Superlattices.

Subband structures and intersubband optical transitions in lateral surface superlattices under electric fields

Electric-Field-Dependent Intersubband Transition Via Optical Phonons In A Doped-Thin-Layer Inserted Quantum-Well Structure

Influence of ternary mixed crystal defect layer on the localized interface optical-phonon modes in a finite superlattice

Impact of Structural Defects on the Localized Acoustic Wave in Superlattices

Electronic States in GaAs-AlAs Lateral-Surface Superlattices Produced by Deposition of AlAs and GaAs Fractional Layers on (001) Vicinal GaAs Substrates

Phonon Assisted Intersubband Transitions in Step Quantum Well Structures

Localized electronic states in N-layer-based superlattices with structural defects

ZONE-FOLDED LA PHONONS IN AMORPHOUS SEMICONDUCTOR SUPERLATTICES

Intrasubband electron-phonon scattering in doped thin-layer inserted quantum well

Understanding the Nature of Superlattice Interface Modes by Multiphonon Raman Scattering

Optical-Phonon Modes and Electron-Phonon Interaction in Arbitrary Semiconductor Planar Microcavities

Intrinsic point defects investigation in InAlAs with extrapolated defect transition level

Interaction Between an Electron and Optical Phonons in Polar Semiconductor Heterostructures