Abstract:The paper discusses the challenges of developing thin AlN films for thermal management in 3D ICs.The study reports high cross‐plane thermal conductivities of sub‐300 nm‐thick AlN films sputter‐deposited at low temperatures on ordinary SiO2 substrates. The study identifies the crucial role of film texture and arrangement of the fine grains at the AlN/SiO2 interface in achieving high thermal conductivity and thermal boundary conductance. Additionally, the paper introduces an in‐line metrology approach to monitor the thermal conductivity of AlN thin films using X‐ray diffraction. Aluminum nitride (AlN) is a promising material for thermal management in 3D integrated circuits (ICs) due to its high thermal conductivity. However, achieving high thermal conductivity in AlN thin films grown at low temperatures on amorphous substrates poses significant challenges for back‐end‐of‐line (BEOL) compatibility. This study reports high cross‐plane thermal conductivities approaching 90 Wm−1K−1 for sub‐300 nm‐thick AlN films sputter‐deposited at low temperatures (<200 °C) on ordinary SiO2 substrates. The correlations between cross‐plane and in‐plane thermal conductivity, texture, grain size, oxygen content, Al:N atomic ratio, and thermal boundary conductance of these films are explored. These findings reveal the crucial role of grain orientation alignment in achieving high thermal conductivity and high thermal boundary conductance. A method is introduced to effectively monitor the thermal conductivity of the AlN thin films using X‐ray diffraction. This study offers valuable insights that can aid in the implementation of an effective thermal management material in the semiconductor production line.

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