Abstract:Edge-defined Film-fed Growth (EFG) is a promising technology for production of silicon wafers with minimum loss of silicon material for photovoltaic applications. The growth of the hollow tubes by the EFG method is a very high temperature gradient along the direction of tube growth at the melt-solid interface. As this high temperature gradient is necessary to sustain the high speed of silicon growth through dissipating latent heat at the melt-solid interface, it generates substantial amount of thermal stresses that are associated with defect generation and defaituation of the structure. With increase of the tube diameter and reduction of wall thickness, the large thermal stresses lead to significant buckling of the tube.In this study, the buckling behavior of the growing silicon tube is studied experimentally by monitoring deflection of two pairs of opposite faces of an octagonal tube during the growth. Four capacitance sensors were placed on a fixed plane normal to the translation of the tube to measure the varying thickness of the air between the sensor and the tube surface throughout the tube growth. The recorded data reveal the buckling behavior of tubes for several growth runs. Despite the different growth conditions in the EFG systems, similar patterns of buckling behavior have been observed in octagonal silicon tubes with face width of 12.5 cm. A typical buckling pattern observed can be divided into three distinctively different stages, namely seed holder-influenced stage, tube growth stage, and a random fluctuation stage. Each stage has different amplitude of deflection and covers different length of the tube. More interestingly, the recorded surface deflection reveals the displacement of the center of the tube, suggesting off-centered growth and possible instability of the meniscus. It is considered that these mechanisms may contribute to the special buckling pattern observed during growth.

An Advanced Multi-Block Method for the Multiresolution Modelling of EFG Silicon Tube Growth

A multi-block method and multi-grid technique for large diameter EFG silicon tube growth

3D Numerical Investigation and Improvement to the Design of the Thermal Field Before Seeding in a Multi-Die Edge-Defined Film-Fed Growth System for Sapphire Ribbon Crystals

Simulation of Three-Dimensional Eutectic Growth Multi-Phase Field Based on OpenCL Parallel

Experimental Study Of Buckling Behavior Of Octagonal Thin Walled Silicon Tube Grown By Edge-Defined Film-Fed Method

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Simulation computation of MPI-based parallel PF-LBM 3-D dendritic growth model

3D Numerical Design of the Thermal Field Before Seeding in an Edge-Defined Film-Fed Growth System for Β-Ga2o3 Ribbon Crystals

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Three-dimensional Multi-Phase-field Simulation of Eutectoid Alloy Based on OpenCL Parallel

Simulation of Heat Transfer in a Vertical Tubular CVD Reactor

Numerical Simulation of Three-Dimensional Dendritic Growth Using Phase-Field Method

Phase-Field Simulation of Three-Dimensional Dendritic Growth

Simulation of Three-Dimensional Dendritic Growth Using H-adaptive Finite Element Method

An Efficient 3D Tube-Level Flux-Thermal Model of External Tubular Receivers in Solar Power Tower Systems

Technology and Thermomechanics in Growing Tubular Silicon Single Crystals

Numerical modelling of melting front structures during floating zone silicon crystal growth

Numerical Investigation of Induction Heating and Heat Transfer in A Sic Growth System

Meniscus Dynamics and Melt Solidification in the EFG Silicon Tube Growth Process

Three-dimensional Modelling of 300 Mm Czochralski Silicon Crystal Growth with a Transverse Magnetic Field

A High Precision Extrapolation Method in Multiphase-Field Model for Simulating Dendrite Growth