CMOS Limiting Amplifier for SDH STM-16 Optical Receiver

R Tao,ZG Wang,TT Xie,HT Chen,Y Dong,SZ Xie

DOI: https://doi.org/10.1049/el:20010157

2001-01-01

Electronics Letters

Abstract:A 2.5Gbit/s limiting amplifier is realised in a 0.35 mum CMOS technology. At a supply voltage of 5V, the power dissipation is 225mW. The input dynamic range is about 40dB at a constant output voltage swing (400mVp-p). The chip area is 1 x 1.1 mm(2).

What problem does this paper attempt to address?

A 2 GS/s 14-Bit Current-Steering DAC in 65 Nm CMOS Technology for Wireless Transmitter

Luxun Chang,Kaijie Ding,Zhiwei Xu,Chunyi Song,Jipeng Li,Dingkai Zou

DOI: https://doi.org/10.1587/elex.15.20180509

2018-01-01

IEICE Electronics Express

Abstract:: A 14-bit 2 GS / s current-steering digital-to-analog converter (DAC) for transmitter application has been fabricated in TSMC 65 nm CMOS technology. To obtain high linearity, the DAC is segmented as 5 + 9, where the 5-MSB bits are implemented in unary architecture and 9-LSB bits are implemented in binary architecture. The current source array utilizes the random switching scheme to suppress the graded error and symmetrical error caused by process or thermal gradient. In addition, the DAC ’ s dynamic performance is enhanced by adopting a digital pre-distortion algorithm and measurement results validate the proposed technique. The measured spurious free dynamic range (SFDR) before and after enabling pre-distortion scheme improves from 63.8 dBc to 70.0 dBc at 240 MHz output signal. Dual-tone and four-tone measurement results show that the DAC achieves the 3 rd order intermodulation (IM3) lower than − 64 dBc. The DAC occupies an active area of 0.19 mm 2 and consumes a total power of 490 mW from 1.3 V and 2.0 V supplies.
A compact, fully differential D-band CMOS amplifier in 65nm CMOS

Xu, Z.,Gu, Q.J.,Ining Ku,Chang, M.-C.F.

DOI: https://doi.org/10.1109/ASSCC.2010.5716614

2010-01-01

Abstract:A fully differential 144GHz CMOS amplifier has been demonstrated in 65nm CMOS. It validates a maximum 20dB power gain and has positive gain over 38GHz frequency range from 126GHz to 164GHz. With stacking circuit architecture, the amplifier can tolerate up to 2V supply without reliability concern. It also delivers over 5.7dBm saturated output power with PldB of 5dBm under a 2V supply. The amplifier features a 3-stage common-source cascode architecture with on-chip interstage matching. The chip occupies 0.05 mm2 area and draws 39mA and 51mA from 1.4V and 2V supplies respectively. To our best knowledge, this amplifier achieves the highest power gain for CMOS amplifier beyond 100GHz and paves the way for D-band radar and passive imaging system applications.
An Inductorless Transimpedance Amplifier Design for 10 Gb/s Optical Communication Using 0.18-Μm CMOS

Lee Bai Song Samuel,Tan Yung Sern,Thangarasu Bharatha Kumar,Yeo Kiat Seng,Li Zhichao,Yu Xiaopeng

DOI: https://doi.org/10.1109/isicir.2016.7829701

2016-01-01

Abstract:This paper presents a novel inductorless transimpedance amplifier (TIA) design using Global Foundaries 0.18-μm CMOS technology suitable for high speed optical communication. A modified-RGC preamplifier stage (M-RGC) is used to lower input impedance through cascode and parallel PMOS transistor techniques for wideband operation. The amplifier stage used common source amplifiers to increase the gain and the third-order interleaving feedback technique to increase the bandwidth. The proposed TIA has a transimpedance gain of 59.5 dBΩ with bandwidth of 6.16 GHz and a power consumption of 21.2 mW (core power = 17.5 mW) for V DD = 1.8 V.
A CMOS 135–150 GHz 0.4 dBm EIRP transmitter with 5.1dB P1dB extension using IF envelope feed-forward gain compensation

adrian tang,david murphy,frank hsiao,qun jane gu,zhiwei xu,gabriel virbila,yenhsiang wang,hao wu,lan nan,yicheng wu,mauchung frank chang

DOI: https://doi.org/10.1109/MWSYM.2012.6257760

2012-01-01

Abstract:A CMOS D-band 135-150 GHz transmitter is presented with integrated digital control and on-chip antenna. The proposed transmitter employs an IF feed-forward compensation scheme which improves the soft gain compression of the power amplifier by 5.1dB to provide an overall more linear AM-AM profile allowing reduced power back-off for modulation schemes with a high peak-to-average ratio. The proposed D-band transmitter consumes 255mW and occupies 2000 × 1500 um of silicon area. The proposed transmitter delivers a 0.4 dBm EIRP and a saturated power on chip of 13.2 dBm. The transmitter has a peak PAE of 8.2% with power delivered to the antenna and a peak PAE of 0.4% when considering radiated power.
A 10.7-Μa 103-Db DR Hybrid Delta-Sigma Modulator for Sensing Applications

Huizhu Zhang,Xinjie Wu,Zhong Tang,Nianxiong Tan,Xiaopeng Yu,Zhenghao Lu

DOI: https://doi.org/10.1002/cta.4303

IF: 2.378

2024-01-01

International Journal of Circuit Theory and Applications

Abstract:This paper reports a low-power, high dynamic range second-order delta-sigma modulator (DSM) for sensing applications. The DSM employs a hybrid CIFF-B topology, consisting of a continuous-time first stage and a discrete-time second stage. The first stage is an OTA-based RC integrator with inherent anti-aliasing properties, while the second stage is a switched-capacitor integrator. Offset and 1/f noise in the first stage are mitigated by the chopper-stabilization technique, while those in the second stage are suppressed through the gain provided by the first stage. Furthermore, the OTA-sharing technology is utilized in the second stage to realize signal addition before quantization, reducing design complexity. The hybrid DSM prototype is fabricated with a 180-nm CMOS process and occupies an area of 0.123 mm(2). Measurement results show peak SNDR/SNR/SFDR values of 95.8, 97.1, and 102.8 dB, respectively, with a current consumption of 10.7 mu A from a 1.8-V single supply. The reported DSM achieves a 103-dB dynamic range in a 100-Hz signal bandwidth, corresponding to a Schreier figure-of-merit (FoMs) value of 170.2 dB.
1.25 Gb/S Low Power Cmos Limiting Amplifier For Optical Receiver

T Jun,Zg Wang,Bl Liang,Y Hu,S Yi,Yd Zheng

DOI: https://doi.org/10.1109/icsict.2004.1436878

2004-01-01

Abstract:In this paper, we report a limiting amplifier (LA) for optical access networks (OAN) and gigabit Ethernet (GbE). Active inductors are employed as loads to expand the bandwidth and to get stable DC operating points. Omitting source followers (SF), the modified direct-coupled technique is used to reduce power dissipation. This LA exhibits an input dynamic range of 40 dB (5 - 500 mV(p-p)), and an approximately constant single-ended output voltage swing of 280 mVp-p over a 50 Q load. It consumes a DC power of only 130 mW under a single 5 V supply. The realized LA can operate well at standard bit rates of 155 Mb/s, 622 Mb/s and 1.25 Gb/s.
CMOS 1.4 THzΩ 155 Mb/s differential transimpedance preamplifier for optical receiver

Jun Tian,Zhigong Wang,Bangli L. Liang,Mingzhen Xiong,Yi Shi,Youdou Zheng

2004-01-01

Abstract:A CMOS preamplifier for optical access network systems is realized in native CSMC 0.6 μm CMOS technology. A differential architecture is adopted to increase the common mode rejection ratio of the whole circuit, to lower the interference from supply noise and parasitic feedback paths, and to suppress substrate noise and thermal drift. Thus the noise of the preamplifier can be reduced. At the same time, its complementary outputs allow a differential interface to the following differential main amplifier. Without single-ended to differential circuit, the chip achieves monolithic integration under a simpler configuration. Using single stage architecture, the circuit is more stable than a conventional multistage one. Testing results show that the circuit gains a high bandwidth transimpedance gain product up to 1.4 THzΩ and a low equivalent input current noise of 1.81 pA/√Hz under a supply voltage of 5 V. The implemented preamplifier can operate well at standard bit rate of 155 Mb/s (STM-1).
Design and fabrication of a monolithic optoelectronic integrated circuit chip based on CMOS compatible technology

Weifeng Guo,Yong Zhao,Wanjun Wang,Haifeng Shao,Jianyi Yang,Xiaoqing Jiang

DOI: https://doi.org/10.1088/0256-307X/29/4/044209

2012-01-01

Chinese Physics Letters

Abstract:A monolithic optoelectronic integrated circuit chip on a silicon-on-insulator is designed and fabricated based on complementary metal oxide semiconductor compatible technology. The chip integrates an optical Mach-Zehnder modulator (MZM) and a CMOS driving circuit with the amplification function. Test results show that the extinction ratio of the MZM is close to 20 dB and the small-signal gain of the CMOS driving circuit is about 26.9 dB. A 50 mV 10 MHz sine wave signal is amplified by the driving circuit, and then drives the MZM successfully.
Design and Analysis of 20 Gb/s Inductorless Limiting Amplifier in 65 Nm CMOS Technology

He Rui,Xu Jianfei,Yan Na,Sun Jie,Bian Liqian,Min Hao

DOI: https://doi.org/10.1088/1674-4926/35/10/105002

2014-01-01

Abstract:A high speed inductorless limiting amplifier(LA) in an optical communication receiver with the working speed up to 20 Gb/s is presented. The LA includes an input matching network, a four-stage 3rd order amplifier core, an output buffer for the test and a DC offset cancellation(DCOC). It uses the active interleaving feedback technique both to broaden the bandwidth and achieve the flatness response. Based on our careful analysis of the DCOC and stability, an error amplifier is added to the DCOC loop in order to keep the offset voltage reasonable.Fabricated in the 65 nm CMOS technology, the LA only occupies an area of 0.45 0.25 mm2(without PAD). The measurement results show that the LA achieves a differential voltage gain of 37 d B, and a 3-d B bandwidth of 16.5GHz. Up to 26.5 GHz, the Sdd11 and Sdd22are less than –16 d B and –9 d B. The chip excluding buffer is supplied by 1.2 V VDD and draws a current of 50 m A.
A 20 Gb/s Limiting Amplifier in 65nm CMOS technology

Rui He,Jianfei Xu,Na Yan,Min Hao

DOI: https://doi.org/10.1109/ASICON.2013.6811865

2013-01-01

Abstract:This paper presents a 20Gb/s Limiting Amplifier (LA) with the active interleaving feedback technique both to broaden the bandwidth and achieve flatness response. The LA includes an input match and DC offset cancellation (DCOC), a four-stage 3rd order amplifier core and an output buffer for test. Simulated in the 65nm CMOS technology, the LA exhibits a voltage gain of 38.5dB, a 3-dB bandwidth of 18GHz and an integrated input noise of 0.56mV with the area of only 0.45 × 0.25 mm2. The chip excluding buffer is supplied by 1.2V VDD and consumes DC power of 61mW.
3.5-Gb/S 0.35-Mu M Cmos Data Decision Ic

Z Gu,Zg Wang,H Wang,R Tao,Tt Xie,Sz Xie,Y Dong

DOI: https://doi.org/10.1117/12.444577

2001-01-01

Abstract:A data decision IC is designed for STM-16 SDH-systems. A differential high-speed master-slave DFF is used for the decision function. Wide-band high-gain amplifiers are used for input and output data buffers to obtain high sensitivity and sufficient drive capability. The chip was realized in a 0.35-mum CMOS foundry technology. The chip size is 0.7 x 0.8mm(2). The supply voltage is 5 V and the current is 50 mA. A working data rate of higher than 3.5Gb/s has been measured. The sensitivity is as low as 10similar to20mV.
A CMOS Limiting Amplifier and Received Signal Strength Indicator for Bluetooth Receiver

WANG Jing-guang,MA De-qun,HONG Zhi-liang

DOI: https://doi.org/10.3969/j.issn.0255-8297.2005.05.008

2005-01-01

Journal of Applied Sciences

Abstract:A piece-wise linear logarithmic amplifier is presented. It can be used as limiting amplifier and received-signal-strength indicator (RSSI) in Bluetooth receivers. The circuit, as a part of Bluetooth RF chip, is implemented with the 0.35 μm CMOS technology. Measurements show that RSSI linear error is less than 0.5 dB with a dynamic range of 40 dB.
An Area-Efficient and Programmable 4 × 25-to-28.9 Gb/s Optical Receiver with DCOC in 0.13 µm SiGe BiCMOS

Haojie Xu,Jiarui Liu,Zhiyu Wang,Min Zhou,Jiongjiong Mo,Faxin Yu

DOI: https://doi.org/10.3390/electronics9061032

IF: 2.9

2020-01-01

Electronics

Abstract:In this paper, we present an area-efficient noise-optimized programmable 4 × 25-to-28.9 Gb/s optical receiver. Both high- and low-power modes are available for the receiver to meet different requirements. Emitter degeneration provides the input transimpedance amplifier (TIA) stage with improved stability. The noise of the TIA with emitter degeneration is analyzed, and an improved noise optimization method for the TIA is proposed. A sink current source with emitter degeneration in a DC offset cancellation (DCOC) loop reduces the noise introduced by the DCOC circuit. Moreover, with parasitic capacitor utilization in the DCOC loop and capacitive emitter degeneration in the variable-gain amplifier (VGA) stage, the chip area is minimized. Fabricated in a 0.13 µm SiGe BiCMOS technology, the receiver achieved a small area of 0.54 mm2 per lane. The measured bit error rate (BER) is 10−12 with input signal varying from 110 μApp to 1150 μApp. The one-lane power dissipation values in the low-power and high-power modes are 84.97 mW and 123.75 mW, respectively.
An Area-Efficient and Programmable 4 x 25-to-28.9 Gb/s Optical Receiver with DCOC in 0.13 m SiGe BiCMOS

Haojie Xu,Jiarui Liu,Zhiyu Wang,Min Zhou,Jiongjiong Mo,Faxin Yu

DOI: https://doi.org/10.3390/electronics9061032

IF: 2.9

2020-01-01

Electronics

Abstract:In this paper, we present an area-efficient noise-optimized programmable 4 x 25-to-28.9 Gb/s optical receiver. Both high- and low-power modes are available for the receiver to meet different requirements. Emitter degeneration provides the input transimpedance amplifier (TIA) stage with improved stability. The noise of the TIA with emitter degeneration is analyzed, and an improved noise optimization method for the TIA is proposed. A sink current source with emitter degeneration in a DC offset cancellation (DCOC) loop reduces the noise introduced by the DCOC circuit. Moreover, with parasitic capacitor utilization in the DCOC loop and capacitive emitter degeneration in the variable-gain amplifier (VGA) stage, the chip area is minimized. Fabricated in a 0.13 mu m SiGe BiCMOS technology, the receiver achieved a small area of 0.54 mm(2)per lane. The measured bit error rate (BER) is 10(-12)with input signal varying from 110 mu App to 1150 mu App. The one-lane power dissipation values in the low-power and high-power modes are 84.97 mW and 123.75 mW, respectively.
A 1V 210µW 98dB SFDR Audio ΔΣ modulator in 180nm standard CMOS

Liangdong Chen,Liyuan Liu,Dongmei Li,Chun Zhang,Zhihua Wang

DOI: https://doi.org/10.1109/ICSICT.2010.5667709

2010-01-01

Abstract:A single-loop second-order 3 bits ΔΣ modulator in 180 nm standard CMOS is presented. The design is intended to achieve high linearity in low-voltage low-power environment. The modulator achieves 89-dB SNDR and 98-dB SFDR in 20Hz~16kHz signal bandwidth, while the power consumption is 210 μW under 1-V supply voltage.
1.25 Gbit/s CMOS common-gate preamplifier for optical receiver

田俊,王志功,梁帮立,冯军,胡艳,章丽,熊明珍,施毅,郑有炓

DOI: https://doi.org/10.3321/j.issn:1001-0505.2004.05.003

2004-01-01

Abstract:A (complementary metal-oxide-semiconductor) CMOS preamplifier for optical access network systems and gigabit Ethernet systems is realized. A common-gate topology other than a common-source one is adopted to reduce input resistance. As a result, the parasitic capacitance of photo detector (PD) can only shift the non-dominant pole and has neglectable impact on the dominant pole, which makes it possible to achieve a large bandwidth. Moreover, an active feedback branch, which is better than conventional resistive feedback network, is used to attain even wider bandwidth. The circuit has a single-ended output voltage larger than 64 mV (peak-to-peak) with an input photocurrent of 805 μA. The root-mean-square (rms) jitter is below 36 ps. According to above measurement results, the implemented preamplifier can operate well at standard bit rate of 1.25 Gbit/s.
A 95db SNDR Audio ΔΣ Modulator in 65nm CMOS

L. Liu,D. Li,Y. Ye,L. Chen,Z. Wang

DOI: https://doi.org/10.1109/cicc.2011.6055418

2011-01-01

Abstract:A discrete time single loop 3rd order 5-bit ΔΣ modulator is implemented in general purpose 65nm CMOS. A passive capacitor analog summing method without signal attenuation is developed and combined with an asynchronous self-timing successive approximation quantizer. The modulator achieves 95dB SNDR in audio bandwidth and consumes only 371μW from 1V supply. Under 0.6V supply, the SNDR performance keeps at 90.2dB with 133μW power dissipation. The active core area is 0.41mm2.
A 1.2-V,84-dB∑△ADM in 0.18-μm digital CMOS technology

Yin Shujuan,Li Xiangyu

2013-01-01

Abstract:A low power and low voltage∑△analog-to-digital modulator is realized with digital CMOS technology, which is due to full compensated depletion mode capacitors.Compared with mixed signal technology,this type of modulator is more compatible for pure digital applications.A pseudo-two-stage class-AB OTA is used in switchedcapacitor integrators for low voltage and low power.The modulator is realized in standard SMIC 0.18μm 1P6M digital CMOS technology.Measured results show that with 1.2 V supply voltage and a 6 MHz sample clock,the dynamic range of the modulator is 84 dB and the total power dissipation is 2460μW.
A 20-Gb/s CMOS Cross-Coupled Dual-Feedback Loop Transimpedance Amplifier

Weiping Wu,Lei Zhang,Yan Wang

DOI: https://doi.org/10.1109/ISCAS45731.2020.9180566

2020-01-01

Abstract:This paper presents a 20-Gb/s optical receiver consisting of a novel transimpedance amplifier (TIA), three active feedback Cherry-Hooper limiting amplifiers (LA) and DC offset cancellation loop. A novel cross-coupled dual-feedback loop TIA is proposed to reduce the input impedance and enhance the tolerance of large input capacitance without deterioration of the transimpedance gain. Moreover, not any extra noise, power consumption or chip area is introduced. Implemented in 65-nm CMOS technology, the receiver achieves 73.1 d135/ transimpedance gain with a bandwidth of 10.2 GHz and a data rate of 20 Gb/s, while the input referred noise (IRN) current is below 30.5 pA/root Hz from 1 to 10.2 GHz. The core circuit consumes a DC power of 9.6 mW from a 1.2V supply (without output buffer) and occupies a layout area of 0.042 mm(2).
A 1.2-V, 84-Db ΣΔ ADM in 0.18-Μm Digital CMOS Technology

Yin Shujuan,Li Xiangyu

DOI: https://doi.org/10.1088/1674-4926/34/8/085003

2013-01-01

Journal of Semiconductors

Abstract:A low power and low voltage Sigma Delta analog-to-digital modulator is realized with digital CMOS technology, which is due to full compensated depletion mode capacitors. Compared with mixed signal technology, this type of modulator is more compatible for pure digital applications. A pseudo-two-stage class-AB OTA is used in switchedcapacitor integrators for low voltage and low power. The modulator is realized in standard SMIC 0.18 mu m 1P6M digital CMOS technology. Measured results show that with 1.2 V supply voltage and a 6 MHz sample clock, the dynamic range of the modulator is 84 dB and the total power dissipation is 2460 mu W.

CMOS Limiting Amplifier for SDH STM-16 Optical Receiver

A 2 GS/s 14-Bit Current-Steering DAC in 65 Nm CMOS Technology for Wireless Transmitter

A compact, fully differential D-band CMOS amplifier in 65nm CMOS

An Inductorless Transimpedance Amplifier Design for 10 Gb/s Optical Communication Using 0.18-Μm CMOS

A CMOS 135–150 GHz 0.4 dBm EIRP transmitter with 5.1dB P1dB extension using IF envelope feed-forward gain compensation

A 10.7-Μa 103-Db DR Hybrid Delta-Sigma Modulator for Sensing Applications

1.25 Gb/S Low Power Cmos Limiting Amplifier For Optical Receiver

CMOS 1.4 THzΩ 155 Mb/s differential transimpedance preamplifier for optical receiver

Design and fabrication of a monolithic optoelectronic integrated circuit chip based on CMOS compatible technology

Design and Analysis of 20 Gb/s Inductorless Limiting Amplifier in 65 Nm CMOS Technology

A 20 Gb/s Limiting Amplifier in 65nm CMOS technology

3.5-Gb/S 0.35-Mu M Cmos Data Decision Ic

A CMOS Limiting Amplifier and Received Signal Strength Indicator for Bluetooth Receiver

An Area-Efficient and Programmable 4 × 25-to-28.9 Gb/s Optical Receiver with DCOC in 0.13 µm SiGe BiCMOS

An Area-Efficient and Programmable 4 x 25-to-28.9 Gb/s Optical Receiver with DCOC in 0.13 m SiGe BiCMOS

A 1V 210µW 98dB SFDR Audio ΔΣ modulator in 180nm standard CMOS

1.25 Gbit/s CMOS common-gate preamplifier for optical receiver

A 95db SNDR Audio ΔΣ Modulator in 65nm CMOS

A 1.2-V,84-dB∑△ADM in 0.18-μm digital CMOS technology

A 20-Gb/s CMOS Cross-Coupled Dual-Feedback Loop Transimpedance Amplifier

A 1.2-V, 84-Db ΣΔ ADM in 0.18-Μm Digital CMOS Technology