Study on Phase Transition Current Characterization Dependent on Temperature and Electric Field for Antiferroelectric Thick Films on Silicon Substrates

杨玉华,杜妙璇,关新锋,丑修建,张文栋

DOI: https://doi.org/10.3969/j.issn.1001-9731.2012.09.031

2012-01-01

Journal of Functional Biomaterials

Abstract:（Pb, La） （Zr, Ti） O3 antiferroelectric thick film which had high （100） orientation, smooth surface and dense structure was prepared on Pt（lll）/Ti/SiO2/Si substrate by sol-gel technology. The electrical properties of （Pb, La）（Zr, Ti）O3 antiferroelectric thick film under various temperature and DC electric fields were studied. The experimental results show that antiferroelectric thick film happened mutual phase transformation of antiferroelectric, ferroelectric and paraelectric depending on temperature and electric field. The phase transition tern perature of antiferroelectric - ferroelectric gradually decreases with the increase of applied electric field. The peak value of dielectric constant decreased from 2410 to 662. The phase transition current density increased from 2.21 × 10-7 to 8.52× 10 7A/cm2. The phase transition electric field of antiferroelectric-ferroelectric grad- ually decreases with the increase of applied temperature field. The relevant saturation polarization changed from 39 to 31/2C/cm^2. The phase transition current density decreased from 2.89 × 10-5 to 8.8 × 10 6 A/cm2. The phase transition current characterization can he effectively adjusted By coupling application of temperature field and DC electric field.