Annealing effect on the structural, opto-electronic and photoluminescence properties of sprayed Zn0.76Mg0.24O films for application in solar cells

P. Prathap,A. Suryanarayana Reddy,N. Revathi,Y. P. Venkata Subbaiah,K. T. Ramakrishna Reddy
DOI: https://doi.org/10.1002/pssa.200983713
2010-01-01
Abstract:In recent years, Zn1-xMgxO has attracted the attention of many researchers as its physical behaviour can be suitably controlled by varying the Zn/Mg ratio. The superior advantages associated with Zn1-xMgxO make this material as a potential candidate for application in Cu(InGa)Se-2-based solar cells. In the present investigation, Zn1-xMgxO films have been prepared by spray pyrolysis at 300 degrees C and subsequently annealed in argon and oxygen ambience at temperatures that vary in the range, 100-500 degrees C. The changes occurred in the physical characteristics of the layers as a function of annealing temperature have been studied. The influence of annealing on the structure, topography, opto-electronic and photoluminescence properties was found to be significant. The results have been presented and discussed. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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