Structural transitions and electronic properties of the ultrathin SiC nanotubes under uniaxial compression

Xiaoqiu Wang,Baolin Wang,Jijun Zhao,Guanghou Wang

DOI: https://doi.org/10.1016/j.cplett.2008.07.040

IF: 2.719

2008-01-01

Chemical Physics Letters

Abstract:An unusual type of fourfold-coordinated ultrathin SiC nanotube corresponds to a distinct minimum on the transformation from zigzag to armchair.

What problem does this paper attempt to address?

Structure and thermophysical properties of single-wall Si nanotubes

Xinwei Wang,Zhen Huang,Tao Wang,Yuk Wai Tang,Xiao Cheng Zeng

DOI: https://doi.org/10.1016/j.physb.2007.11.016

2008-01-01

Abstract:In this work, molecular dynamics (MD) simulation based on the environment-dependent interatomic potential is carried out to explore the structure, atomic energy distribution, and thermophysical properties of single-wall Si nanotubes (SWSNTs). The unique structure of SWSNTs leads to a wider range energy distribution than crystal Si (c-Si), and results in a bond order in the range of 4.8–5. The thermal conductivity of SWSNTs is much smaller than that of bulk Si, and shows significantly slower change with their characteristic size than that of Si films. Out of the three types of SWSNTs studied in this work, pentagonal SWSNTs have the highest thermal conductivity while hexagonal SWSNTs have the lowest one. The specific heat of SWSNTs is a little larger than that of bulk c-Si. Pentagonal and hexagonal SWSNTs have close specific heats, which are a little larger than that of rectangular SWSNTs.
Structural Phase Transition of Double-walled Silicon Carbide Nanotubes under Uniaxial Compression: a Molecular Dynamics Analysis

Jee Soo Shim,Cheng Yu Cui,Dong Hyun Go,Hyeon Gyu Beom

DOI: https://doi.org/10.1007/s12633-023-02688-w

IF: 3.4

2023-09-27

Silicon

Abstract:In this study, uniaxial compression tests were conducted on double-walled silicon carbide nanotubes using molecular dynamics simulations. Four types of nanotubes with different chiralities were used in this study. The Tersoff potential was employed to reproduce the atomic interactions of each nanotube. The influence of the longitudinal length of the nanotubes on the buckling behavior and mechanical stability was analyzed. When the nanotubes buckled, a specific phenomenon occurred between the double walls of the nanotubes, where the inner and outer nanotube atoms of the buckled surface bonded to each other and underwent structural phase transitions. Particularly, the silicon carbide constituting the nanotubes transitioned from sp 2 to sp 3 bond. The structural phase transitions seemed to be due to the self-healing property, one of the properties of silicon carbide nanostructures. The potential energy of the atoms where the transition occurred was similar to that of silicon carbide in the form of a zinc blende. The strain energy curve and radial distribution function diagram were analyzed to verify that a structural phase transition occurred in the double-walled silicon carbide nanotubes.

materials science, multidisciplinary,chemistry, physical
Strain Induced Structural Phase Transition in TM6X6 (TM = Mo, W; X = S, Se, Te) Nanowires

Yi Peng,Xiaolin Wei,Chuanhong Jin,Yanning Zhang,Juexian Cao

DOI: https://doi.org/10.1016/j.jssc.2021.122194

IF: 3.3

2021-01-01

Journal of Solid State Chemistry

Abstract:The effect of axial strain on the structural phase transition and electronic properties of TM6X6 (TM = Mo, W; X = S, Se, Te) nanowires have been systematically investigated by first-principles calculations. It is interesting to see the structural phase transition from the stable alpha-TM6X6 into metastable beta-TM6X6 nanowires by external axial tensile strains, accompanied by the electronic feature transition from metal to semiconductor. Among them, other beta-TM6X6 nanowires exhibit direct bandgap semiconducting characteristics whereas the beta-TM6Te6 nanowires are indirect bandgap semiconductors. Our results have revealed the structural phase transition and metal-to-semiconductor transition induced by axial strain and suggested potential application of TM6X6 nanowires in future phase-controlled catalytic, electronic and optoelectronic devices.
Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

XD Han,YF Zhang,XQ Liu,Z Zhang,YJ Hao,XY Guo

DOI: https://doi.org/10.1063/1.2141654

IF: 2.877

2005-01-01

Journal of Applied Physics

Abstract:The plastic deformation features of intrinsic brittle-featured SiC nanowires by high resolution electron microscopy have been investigated. Strong plastic deformation strain fields were observed in a bent SiC nanowire. The achieved localized strain reaches about 1.5%. Localized lattice bending, atomic lattice disordering, and amorphization are contribution factors to achieve the plastic deformation. The projected Si–Si bonding angle distribution on the (110) atomic plane demonstrates the disordering features of the bent SiC nanowire. Buckling is found at the compressive side of the bent SiC nanowire. Growth bending can be achieved through {111} twinning and phase transformation from 3C to 2H.
Bonding Nature, Structural Optimization, and Energetics studies of SiC Graphitic-Like layer Structures and Single/Double Walled Nanotubes

Ming Yu,C. S. Jayanthi,S. Y. Wu

DOI: https://doi.org/10.1103/PhysRevB.82.075407

2009-01-23

Abstract:The structural optimization and energetics studies of SiC graphitic-like structures have been investigated theoretically in the context of formations of stable graphitic-like layer structures, single- and multi-walled nanotubes using the DFT-based Vienna ab-inito simulation package. The bonding nature of atoms in the optimized structures has been examined using a local analysis technique based on a self-consistent and environment-dependent semi-empirical Hamiltonian. Results of our studies reveal that stabilized SiC graphitic-like layer structures possess the sp2 bonding nature, different from the sp3 bonding nature in bulk SiC. Such flexibility in bonding configurations between Si and C atoms holds the possibility for a wide range of stable SiC-based structures, similar to those for carbon-based structures. In the case of SiC-based nanotubes, we have calculated quantities such as the strain energy, the degree of buckle in the cylindrical shell, and bond charges between Si and C atoms, to obtain an understanding of the optimized structures. The optimized interlayer spacing of SiC graphitic-like multilayer sheets has been found to depend on the ordering of atoms in different layers of the SiC graphitic-like structure (0.37 nm for the Si-C sequence of bilayer arrangement versus 0.48 nm for either the Si-Si or the C-C sequence of bilayer arrangement). These observations may be attributed to the Coulomb interactions due to the charge redistribution among Si and C atoms. On the other hand, the existence of two different ranges of interlayer separation in SiC double-walled nanotubes (0.38 nm for zigzag and 0.48 nm for armchair) is found to be related to whether the dominant interlayer neighbors are of the Si-C type or the Si-Si and C-C types.

Materials Science
Metastable C-centered Orthorhombic Si8and Ge8

Jinhui Zhai,Dongli Yu,Kun Luo,Qianqian Wang,Zhisheng Zhao,Julong He,Yongjun Tian

DOI: https://doi.org/10.1088/0953-8984/24/40/405803

2012-01-01

Journal of Physics Condensed Matter

Abstract:A theoretical prediction on the structural stabilities, mechanical properties, and electronic properties of the C-centered orthorhombic (Cco) Si(8) and Ge(8) is presented, inspired by a recently proposed carbon allotrope structure, Cco-C(8). Energetically comparable with previously known metastable phases, Cco-Si(8) and Cco-Ge(8) may be obtained by decompressing the high-pressure β-Sn phases, or by compressing the corresponding nanotubes. The calculated bulk moduli of Cco-Si(8) and Cco-Ge(8) are close to those of the diamond phases. Further study of the electronic properties reveals that the band gaps of Cco-Si(8) and Cco-Ge(8) are tunable with variations in lattice parameters.
Pressure-induced Structural Transformation of CaC2.

Lu Wang,Xiaoli Huang,Da Li,Yanping Huang,Kuo Bao,Fangfei Li,Gang Wu,Bingbing Liu,Tian Cui

DOI: https://doi.org/10.1063/1.4948705

IF: 4.304

2016-01-01

The Journal of Chemical Physics

Abstract:The high pressure structural changes of calcium carbide CaC2 have been investigated with Raman spectroscopy and synchrotron X-ray diffraction (XRD) techniques in a diamond anvil cell at room temperature. At ambient conditions, two forms of CaC2 co-exist. Above 4.9 GPa, monoclinic CaC2-ii diminished indicating the structural phase transition from CaC2-ii to CaC2-i. At about 7.0 GPa, both XRD patterns and Raman spectra confirmed that CaC2-i transforms into a metallic Cmcm structure which contains polymeric carbon chains. Along with the phase transition, the isolated C2 dumbbells are polymerized into zigzag chains resulting in a large volume collapse with 22.4%. Above 30.0 GPa, the XRD patterns of CaC2 become featureless and remain featureless upon decompression, suggesting an irreversible amorphization of CaC2.
Structural, Mechanical, and Electronic Properties of Ultrathin ZnO Nanowires

Baolin Wang,Jijun Zhao,Jianming Jia,Daning Shi,Jianguo Wan,Guanghou Wang

DOI: https://doi.org/10.1063/1.2951617

IF: 4

2008-01-01

Applied Physics Letters

Abstract:We report a structural transformation between the regular wurtzite and the unbuckled wurtzite (hexagonal) structure for ultrathin single-crystalline [0001] ZnO nanowires under uniaxial elongation and compression. Our density functional calculations show that hexagonal structure corresponds to a distinct minimum on the transformation path. Young’s moduli of the ZnO nanowires with the hexagonal structures are larger than those with the wurtzite structures at the same size. Within the nanowire size range considered, Young’s moduli of the ZnO nanowires decrease with increasing wire diameter. The electronic properties of these two types of ZnO nanowires exhibit distinctly different behaviors.
Structural Trends Interpretation of the Metal-to-Semiconductor Transition in Deformed Carbon Nanotubes

JQ Lu,J Wu,WH Duan,BL Gu,HT Johnson

DOI: https://doi.org/10.1063/1.1923160

IF: 2.877

2005-01-01

Journal of Applied Physics

Abstract:Two mechanisms that drive metal-to-semiconductor transitions in single-walled carbon nanotubes are theoretically analyzed through a simple tight-binding model. By considering simple structural trends, the results demonstrate that metal-to-semiconductor transitions can be induced more readily in metallic zigzag nanotubes than in armchair nanotubes. Furthermore, it is shown that both mechanisms have the effect of making the two originally equivalent sublattices physically distinguishable.
Essential Electronic Properties of Silicon Nanotubes

Hsin-Yi Liu,Ming-Fa Lin,Jhao-Ying Wu

DOI: https://doi.org/10.3390/nano11102475

IF: 5.3

2021-09-22

Nanomaterials

Abstract:In this work, the various electronic properties of silicon nanotubes (SiNTs) were investigated by the density functional theory. The cooperative and competitive relationships between the chiral angle, periodic boundary conditions, and multi-orbital hybridizations create unusual narrow gaps and quasi-flat bands in the ultra-small armchair and zigzag tubes, respectively. The features varied dramatically with tube radii. Armchair SiNTs (aSiNTs) have an indirect-to-direct band gap transition as their radius is increased to a particular value, while zigzag SiNTs (zSiNTs) present a metal-semiconductor transition. The projected density of states was used to elucidate the critical transitions, and the evolution of p and s orbital mixing states during the process are discussed in detail. The information presented here provides a better understanding of the essential properties of SiNTs.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Direct Observation of Super‐Plasticity of Beta‐SiC Nanowires at Low Temperature

Yuefei Zhang,Xiaodong Han,Kun Zheng,Ze Zhang,Xiaona Zhang,Jingyong Fu,Yuan Ji,Yajuan Hao,Xiangyun Guo,Zhonglin Wang

DOI: https://doi.org/10.1002/adfm.200700162

IF: 19

2007-01-01

Advanced Functional Materials

Abstract:Super-plasticity of single-crystal beta-SiC [111] nanowires for > 200 % elongation was observed by in situ axial-tensile experiments in a scanning electron microscope. The SiC nanowires were characterized by a bamboo-like structure appearing as the 3C structured segments intergrowth along the nanowire. The axial localized plasticity and super-plasticity are suggested to result only from the 3C segments, through dislocation generation, propagation and amorphization in contrast to the highly defected structural segments that conduct elastic-deformation only, owing to the lack of slip systems. These results provide key information for understanding the mechanical behavior of SiC nanowires.
Mechanical tensile behavior-induced multi-level electronic transport of ultra-thin SiC NWs

Dian Song,Kun Liu,Jie Li,Haiyang Zhu,Liying Sun,Artem Okulov

DOI: https://doi.org/10.1016/j.mtcomm.2023.106528

IF: 3.8

2023-06-25

Materials Today Communications

Abstract:Mechanical tensile behavior and its influence on electron transport are especially appealing for ultra-thin SiC Nanowires (NWs). Our studies theoretically show that ultra-thin SiC-[100] NWs in different diameters possess much better plasticity than SiC NWs in large scales and exhibit non-traditionally multiple-fluctuating stress-strain curves due to the chain-by-chain fracture of NWs. Noticeably, NWs possesses almost the same fracture stain and the corresponding stress decreases with diameter. Influenced by the strain, ultra-high transmission coefficients appear (exceed 1) and stable electron transmission can be kept in some strain range for all sizes of SiC NWs. An obvious increase of transmission peaks occurs in the thinnest SiC atomic chain at larger strains while the strain has almost no effect on the number of transmission peaks for other thicker SiC NWs. The generation of monatomic chains would weaken the electron transport of thicker SiC NWs. Internally, C elements and p-orbital contribute more in electron transport and stretching strains have almost no effect on such contribution assignments. This work provides stronger support for applications of ultra-thin SiC-[100] NWs in nano-piezoelectric devices and nanoelectronics in mechanically disturbed environments, and an effective way to strengthen electron transport of NWs.

materials science, multidisciplinary
Uniaxial-stress Effects on Electronic Properties of Silicon Carbide Nanowires

Binghai Yan,Gang Zhou,Wenhui Duan,Jian Wu,Bing-Lin Gu

DOI: https://doi.org/10.1063/1.2221388

IF: 4

2006-01-01

Applied Physics Letters

Abstract:First-principles calculations are performed to study the mechanical properties, electronic structure, and uniaxial-stress effects of β-SiC nanowires (NWs). It is found that the band gap of SiC NWs becomes larger as their diameter decreases because of the quantum confinement effect, but increases (decreases) slightly with increasing tensile (compressive) stress up to about 12GPa. The calculated Young’s modulus and tensile strength of SiC NWs are about 620 and 52GPa, respectively, in accordance with the experimental data. The characteristics of their mechanical and electronic properties suggest that β-SiC NWs may be used in electronic composites as reinforcement nanomaterials or in nanoscale electronic/photoelectric devices under harsh environments.
Phase Transition and Compressibility in Silicon Nanowires

Yuejian Wang,Jianzhong Zhang,Ji Wu,Jeffrey L. Coffer,Zhijun Lin,Stanislav V. Sinogeikin,Wenge Yang,Yusheng Zhao

DOI: https://doi.org/10.1021/nl8016576

IF: 10.8

2008-01-01

Nano Letters

Abstract:Silicon nanowires (Si NWs), one-dimensional single crystalline, have recently drawn extensive attention, thanks to their robust applications in electrical and optical devices as well as in the strengthening of diamond/SiC superhard composites. Here, we conducted high-pressure synchrotron diffraction experiments in a diamond anvil cell to study phase transitions and compressibility of Si NWs. Our results revealed that the onset pressure for the Si I-II transformation in Si NWs is approximately 2.0 GPa lower than previously determined values for bulk Si, a trend that is consistent with the analysis of misfit in strain energy. The bulk modulus of Si-l NWs derived from the pressure-volume measurements is 123 GPa, which is comparable to that of Si-V NWs but 25% larger than the reported values for bulk silicon. The reduced compressibility in Si NWs indicates that the unique wire-like structure in nanoscale plays vital roles in the elastic behavior of condensed matter.
Band-gap Modulation of Graphane-Like SiC Nanoribbons under Uniaxial Elastic Strain

Ben-Ling Gao,Qing-Qiang Xu,San-Huang Ke,Ning Xu,Guang Hu,Yanzong Wang,Feng Liang,Yalu Tang,Shi-Jie Xiong

DOI: https://doi.org/10.1016/j.physleta.2013.12.024

IF: 2.707

2013-01-01

Physics Letters A

Abstract:The band-gap modulation of zigzag and armchair graphane-like SiC nanoribbons (GSiCNs) under uniaxial elastic strain is investigated using the density functional theory. The results show that band gap of both structures all decreases when being compressed or tensed. In compression, both zigzag and armchair GSiCNs are semiconductors with a direct band gap. However, in tension, the armchair GSiCNs undergo a direct-to-indirect band-gap transition but the zigzag GSiCNs still have a direct band gap. These results are also proved by HSE06 method. This implies a potential application of the graphane-like SiC nanoribbons in the future pressure sensor and optical electronics nanodevices.
Geometric analysis of shape transition for two-layer carbon–silicon nanotubes

Xiangyan Luo,Quan Xie,Zean Tian,Xiaotian Guo,Jinmin Zhang,Tinghong Gao,Yongchao Liang

DOI: https://doi.org/10.1038/s41598-020-71026-6

IF: 4.6

2020-09-14

Scientific Reports

Abstract:Abstract The two-layer nanotubes consisted of carbon atoms on the outside layer and silicon atoms on the inside layer (CNT@SiNT) show a series of diversity in the shape transitions, for instance transforming from a circle through an oval to a rectangle. In this paper, we investigate this geometric change from three perspectives. In the first aspect, we stationary time, followed by quantize in the three-dimensional Z-axis of nanotubes. In the second aspect, we stationary Z-axis, followed by quantize in the time. Finally, we tracked distance of nanotubes flattest section and roundest section. At the stationary time, the overall image of different Z-axis distance distributions is similar to a plan view of multiple ice creams, regardless of whether CNT or SiNT are on the same Z-axis, their slice plans are circle or rectangle of the projection of the Z-axis section on the XOY plane. In the stationary Z-axis, the nanotubes periodically change from a circle to an oval, and then from an oval to a rectangle at different times. Most remarkably, the distance value of deformation which we track the flattest and roundest is a constant value, and in the same distance period, there is only one roundest circle and one longest rectangle at different section and different time. The geometric analysis provided theoretical reference for the preparation of various devices and semiconductor nano-heterojunctions.

multidisciplinary sciences
Crystalline-amorphization-recrystallization Structural Transition and Emergent Superconductivity in Van Der Waals Semiconductor SiP under Compression

Chunhua Chen,Zhenyu Ding,Yonghui Zhou,Yifang Yuan,Nixian Qian,Jing Wang,Shuyang Wang,Ying Zhou,Chao An,Min Zhang,Xuliang Chen,Xiaoping Yang,Mingliang Tian,Zhaorong Yang

DOI: https://doi.org/10.1007/s11433-023-2325-x

2024-01-01

Abstract:van der Waals (vdW) semiconductors have gained significant attention due to their unique physical properties and promising applications, which are embedded within distinct crystallographic symmetries. Here, we report a pressure-induced crystalline-amorphization-recrystallization transition under compression in binary vdW semiconductor SiP. Upon compression to 52 GPa, bulk SiP undergoes a consecutive phase transition from pristine crystalline to amorphous phase, ultimately to recrystallized phase. By employing synchrotron X-ray diffraction experiments in conjunction with high-pressure crystal structure searching techniques, we reveal that the recrystallized SiP hosts a tetragonal structure (space group I4mm) and further transforms partially into a cubic phase (space group Fm3̅m ). Consistently, electrical transport and alternating-current magnetic susceptibility measurements indicate the presence of three superconducting phases, which are embedded in separate crystallographic symmetries—the amorphous, tetragonal, and cubic structures. Furthermore, a high superconducting transition temperature of 12.3 K is observed in its recovered tetragonal phase during decompression. Our findings uncover a novel phase evolution path and elucidate a pressure-engineered structure-property relationship in vdW semiconductor SiP. These results not only offer a new platform to explore the transformation between different structures and functionalities, but also provide new opportunities for the design and exploration of advanced devices based on vdW materials.
Mechanical properties of Si nanowires as revealed by in situ transmission electron microscopy and molecular dynamics simulations.

Dai-Ming Tang,Cui-Lan Ren,Ming-Sheng Wang,Xianlong Wei,Naoyuki Kawamoto,Chang Liu,Yoshio Bando,Masanori Mitome,Naoki Fukata,Dmitri Golberg

DOI: https://doi.org/10.1021/nl204282y

IF: 10.8

2012-01-01

Nano Letters

Abstract:Deformation and fracture mechanisms of ultrathin Si nanowires (NWs), with diameters of down to similar to 9 nm, under uniaxial tension and bending were investigated by using in situ transmission electron microscopy and molecular dynamics simulations. It was revealed that the mechanical behavior of Si NWs had been closely related to the wire diameter, loading conditions, and stress states. Under tension, Si NWs deformed elastically until abrupt brittle fracture. The tensile strength showed a clear size dependence, and the greatest strength was up to 11.3 GPa. In contrast, under bending, the Si NWs demonstrated considerable plasticity. Under a bending strain of <14%, they could repeatedly be bent without cracking along with a crystalline-to-amorphous phase transition. Under a larger strain of >20%, the cracks nucleated on the tensed side and propagated from the wire surface, whereas on the compressed side a plastic deformation took place because of dislocation activities and an amorphous transition.
The Structural Transitions of C60 Nanowhiskers under an Electric Field Characterized by in Situ Transmission Electron Microscopy and Electron Energy-Loss Spectroscopy.

Chao Li,Bingzhe Wang,Yuan Yao,Guangzhe Piao,Lin Gu,Yanguo Wang,Xiaofeng Duan,Richeng Yu

DOI: https://doi.org/10.1039/c4nr00758a

IF: 6.7

2014-01-01

Nanoscale

Abstract:In situ electrical transport measurements for individual C60 nanowhiskers are performed using a transmission electron microscope which monitors the crystal and electronic structural changes of the C60 nanowhiskers simultaneously. Electron diffraction combined with electron energy-loss spectroscopy shows that under the external electric current, the C60 nanowhiskers first transform from a face-centered-cubic structure to a disordered arrangement of C60 molecules. The cage structure of the C60 molecules then collapses to an amorphous carbon and finally, the amorphous carbon turns into graphene stacks. This process indicates the hybridization transformation from sp(2.278) to sp(2), which is different from the transition process of C60 materials under high pressure. The obtained results also suggest that the stability of the C60 nanowhiskers should be of crucial concern when they work as electrical devices.
Thermally-driven phase transitions in freestanding low-buckled silicene, germanene, and stanene

John M. Davis,Gustavo S. Orozco-Galvan,Salvador Barraza-Lopez

DOI: https://doi.org/10.1103/PhysRevMaterials.7.054008

2023-03-15

Abstract:Low-buckled silicene, germanene, and stanene are group$-IV$ graphene allotropes. They form a honeycomb lattice out of two interpenetrating ($A$ and $B$) triangular sublattices that are vertically separated by a small distance $\Delta_z$. The atomic numbers $Z$ of silicon, germanium, and tin are larger to carbon's ($Z_C=6$), making them the first experimentally viable two-dimensional topological insulators. Those materials have a twice-energy-degenerate atomistic structure characterized by the buckling direction of the $B$ sublattice with respect to the $A$ sublattice [whereby the $B-$atom either protrudes {\em above} ($\Delta_z>0$) or {\em below} ($\Delta_z<0$) the $A-$atoms], and the consequences of that energy degeneracy on their elastic and electronic properties have not been reported thus far. Here, we uncover {\em ferroelastic, bistable} behavior on silicene, which turns into an {\em average} planar structure at about 600 K. Further, the creation of electron and hole puddles obfuscates the zero-temperature SOC induced band gaps at temperatures as low as 200 K, which may discard silicene as a viable two-dimensional topological insulator for room temperature applications. Germanene, on the other hand, never undergoes a low-buckled to planar 2D transformation, becoming amorphous at around 675 K instead, and preserving its SOC-induced bandgap despite of band broadening. Stanene undergoes a transition onto a crystalline 3D structure at about 300 K, preserving its SOC-induced electronic band gap up to that temperature. Unlike what is observed in silicene and germanene, stanene readily develops a higher-coordinated structure with a high degree of structural order. The structural phenomena is shown to have deep-reaching consequences for the electronic and vibrational properties of those two dimensional topological insulators.

Materials Science,Soft Condensed Matter

Structural transitions and electronic properties of the ultrathin SiC nanotubes under uniaxial compression

Structure and thermophysical properties of single-wall Si nanotubes

Structural Phase Transition of Double-walled Silicon Carbide Nanotubes under Uniaxial Compression: a Molecular Dynamics Analysis

Strain Induced Structural Phase Transition in TM6X6 (TM = Mo, W; X = S, Se, Te) Nanowires

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Bonding Nature, Structural Optimization, and Energetics studies of SiC Graphitic-Like layer Structures and Single/Double Walled Nanotubes

Metastable C-centered Orthorhombic Si8and Ge8

Pressure-induced Structural Transformation of CaC2.

Structural, Mechanical, and Electronic Properties of Ultrathin ZnO Nanowires

Structural Trends Interpretation of the Metal-to-Semiconductor Transition in Deformed Carbon Nanotubes

Essential Electronic Properties of Silicon Nanotubes

Direct Observation of Super‐Plasticity of Beta‐SiC Nanowires at Low Temperature

Mechanical tensile behavior-induced multi-level electronic transport of ultra-thin SiC NWs

Uniaxial-stress Effects on Electronic Properties of Silicon Carbide Nanowires

Phase Transition and Compressibility in Silicon Nanowires

Band-gap Modulation of Graphane-Like SiC Nanoribbons under Uniaxial Elastic Strain

Geometric analysis of shape transition for two-layer carbon–silicon nanotubes

Crystalline-amorphization-recrystallization Structural Transition and Emergent Superconductivity in Van Der Waals Semiconductor SiP under Compression

Mechanical properties of Si nanowires as revealed by in situ transmission electron microscopy and molecular dynamics simulations.

The Structural Transitions of C60 Nanowhiskers under an Electric Field Characterized by in Situ Transmission Electron Microscopy and Electron Energy-Loss Spectroscopy.

Thermally-driven phase transitions in freestanding low-buckled silicene, germanene, and stanene