Abstract:To satisfy the demand for broadband and high-sensitivity terahertz detectors, we designed and verified a broadband terahertz detector built with antenna-coupled AlGaN/GaN high-electron-mobility transistors (HEMTs). Eighteen pairs of dipole antennas with different center frequency from 0.24 to 7.4 THz are arrayed into a bow-tie pattern. The corresponding eighteen transistors have common a source and a drain but different gated channels coupled by the corresponding antennas. The photocurrents generated by each gated channel are combined in the drain as the output port. With incoherent terahertz radiation from a hot blackbody in a Fourier-transform spectrometer (FTS), the detector exhibits a continuous response spectrum from 0.2 to 2.0 THz at 298 K and from 0.2 to 4.0 THz at 77 K, respectively. The results agree well with simulations taking into account the silicon lens, antenna and blackbody radiation law. The sensitivity is characterized under coherent terahertz irradiation, the average noise-equivalent power (NEP) is about 188 pW/ Hz at 298 K and 19 pW/ Hz at 77 K from 0.2 to 1.1 THz, respectively. A maximum optical responsivity of 0.56 A/W and a minimum NEP of 7.0 pW/ Hz at 0.74 THz are achieved at 77 K. The blackbody response spectrum is divided by the blackbody radiation intensity to obtain a performance spectrum, which is calibrated by measuring coherence performance from 0.2 to 1.1 THz to evaluate detector performance at frequencies above 1.1 THz. At 298 K, the NEP is about 1.7 nW/ Hz at 2.0 THz. At 77 K, the NEP is about 3 nW/ Hz at 4.0 THz. For further improvements in sensitivity and bandwidth, high-bandwidth coupling components, smaller series resistance, smaller gate lengths and high-mobility materials need to be considered.

Detection and Analysis of the Responsivity and NEP for HEMT Terahertz Detectors

Responsivity and Noise Characteristics of AlGaN/GaN-HEMT Terahertz Detectors at Elevated Temperatures

TCAD Simulation for Nonresonant Terahertz Detector Based on Double-Channel GaN/AlGaN High-Electron-Mobility Transistor

A GaN/AlGaN HEMT Terahertz Detector Based on Optimized Antennas

A High-Performance Terahertz Detector Based on a Graded Channel GaN High-Electron-mobility Transistor with a Recessed Gate

Smaller Antenna-Gate Gap for Higher Sensitivity of GaN/AlGaN HEMT Terahertz Detectors

A Terahertz Detector Based on Algan/Gan High Electron Mobility Transistor with Bowtie Antennas

Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor

0.2-4.0 THz broadband terahertz detector based on antenna-coupled AlGaN/GaN HEMTs arrayed in a bow-tie pattern

Heterodyne Terahertz Detection Based on Antenna-Coupled AlGaN/GaN High-Electron-mobility Transistor

Terahertz detection module based on antenna-coupled AlGaN/GaN HEMTs

Filter-Enhanced High-Sensitivity Hemt Terahertz Detector At Room Temperature

Passive Terahertz Imaging Detectors Based on Antenna-Coupled High-Electron-mobility Transistors.

Hemispherical lens integrated room temperature ultra-broadband GaAs HEMT terahertz detector

Two-terminal Terahertz Detectors Based on AlGaN/GaN High-Electron-mobility Transistors

Investigation of High Sensitivity Radio-Frequency Readout Circuit Based on Algan/Gan High Electron Mobility Transistor

Characterization of a Room Temperature Terahertz Detector Based on a GaN/AlGaN HEMT

Room Temperature Terahertz Detectors Based on HEMTs Enhanced by Bowtie Antennas

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Detection of incoherent broadband terahertz light using antenna-coupled high-electron-mobility field-effect transistors