Room Temperature Terahertz Detectors Based on HEMTs Enhanced by Bowtie Antennas

Sun Jiandong,Sun Yunfei,Zhou Yu,Zhang Zhipeng,Lin Wenkui,Zeng Chunhong,Wu Dongmin,Zhang Baoshun,Qin Hua
DOI: https://doi.org/10.3969/j.issn.1671-4776.2011.04.002
2011-01-01
Abstract:A room temperature terahertz(THz) detector based on a GaN/AlGaN high electron mobility transistor(HEMT) enhanced by bowtie antenna was presented.Due to its micron sized field effect nature and antenna enhancement,the detector is of high speed and high responsivity.Under terahertz irradiation,the direct photocurrent was observed when the electron channel was strongly modulated by the gate voltage.The received terahertz electric field was significantly enhanced and the detection response was improved due to the novel bowtie antenna of the detector.Through measuring the detector for different polarization terahertz light response,the polarization dependence of photocurrent was verified in accordance with the design of bowtie antennas.The noise equivalent power(NEP) and the average responsivity were estimated to be 5×10-10 W/Hz12 and 42 mA/W at the room temperature of 300 K,respectively.Both the experimental and simulation results show that the photocurrent originates from selfmixing of the incident terahertz wave.The selfmixing can be further enhanced by improving the field effect of two-dimensional electron gas(2DEG) and optimizing the distribution of terahertz field in the electron channel.The expe-rimental results can be well described by selfmixing theory.
What problem does this paper attempt to address?