Preparation And Ion-Implantation Of Solid C-60 Films

Xiangjun Fan,Chang Liu,Tao Yu,Ying Shi,Jinchai Li,Mingshen Ye,Huaixi Guo,Nian Xiao,Yougui Pen,Fengxin Cai
DOI: https://doi.org/10.1016/S0257-8972(94)80036-7
1994-01-01
Abstract:We report on the successful preparation of fullerenes (C60 + C70 mixture yield up to 13 %) by plasma discharge. After chromatography separation with hexane on alumina, 99.9% C60 has been obtained. Solid fullerene films were deposited using an ionized cluster beam technique. The relationship between the quality of the films and the technical conditions of the deposition was studied. Different kind of ions, such as Ar+, N2+, O2+ and P+, were implanted into C60 solid films. Fourier transform IR was used to compare the implanted and unimplanted samples. The electrical conductivity of P+-implanted C60 films was measured in situ. Our preliminary results suggest that ion implantation offers a potential technology for investigating fullerene semiconductors.
What problem does this paper attempt to address?