Molecular Dynamics Simulation of the Local Inherent Structure of Liquid Silicon at Different Temperatures

CS Liu,ZG Zhu,JC Xia,DY Sun
DOI: https://doi.org/10.1103/physrevb.60.3194
1999-01-01
Abstract:Constant-volume and constant-temperature molecular dynamics simulations have been performed to study the inherent structural properties of liquid silicon (I-Si) at different temperatures by using Tersoff potential. Our results first show that the 50 degrees-60 degrees peak in bond angle distributions decomposes into two peaks, which are located 52 degrees and 60 degrees, and a new peak at 75 degrees appears; the 52 degrees peak disappears with a small cutoff distance. The bond length of bonds contributing to 52 degrees peak is much greater than the cutoff distance of covalent bond. The height of 52 degrees peak at first increases and then decreases with temperature, and has a maximum at a certain temperature. The probability of the covalent bonds whose bond angle is greater than 67 degrees shows an anomalous decrease at a certain temperature. These anomalous features may play an important role on the anomalous behavior of some physical properties in l-Si such as electrical resistivity. The height of 60 degrees and 75 degrees peaks increases with temperature. [S0163-1829(99)04229-0].
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