Structure Study of Bulk Nanograined Thermoelectric Bismuth Antimony Telluride

Yucheng Lan,Bed Poudel,Yi Ma,Dezhi Wang,Mildred S. Dresselhaus,Gang Chen,Zhifeng Ren
DOI: https://doi.org/10.1021/nl803235n
IF: 10.8
2009-01-01
Nano Letters
Abstract:The microstructures of bulk nanograined p-type bismuth antimony telluride with a thermoelectric dimensionless figure-of-merit ZT = 1.4 are investigated using transmission electron microscopy. It is found that the bulk material contains both nano- and microsized grains. Between the nanograins, bismuth-rich interface regions with a 4 nm thickness were detected. In addition, nanoprecipitates as well as other defects are also found to be embedded in the nanograins. The high ZT is attributed to the slight increase in the electrical conductivity, and to the large decrease of the thermal conductivity.
What problem does this paper attempt to address?