Abstract:GaN is known as the third generation of semiconductor and holds promising applications. In this present work, one-dimensional zigzag nanotubes derived from GaN are studied in depth, mainly focusing on their chemical bondings, electronic structures, transport properties, and the regulating effects under gate voltage for nanotubes doped with low-concentration non-metallic atoms in main-groups IIIA-VIIA. Some important findings are obtained, such as the chemical bonds around a heteroatom atom, and their average bond length, binding energy, and chemical formation energy are closely related to the atomic number (the atomic radius), and the charge transfer between heteroatom and nanotubes is directly related to their relative electronegativity. More importantly, we find that although the intrinsic nanotube is a semiconductor, when it is doped with non-metallic atoms, the electronic phase of nanotube possesses an obvious odd-even effect. Namely, after being doped by hetero-atoms in main-groups IIIA, VA, VIIA, nanotubes are semiconductors, but they becomes metals after having been doped with hetero-atoms in main-groups IVA and VIA. This phenomenon has a close relation with the lone-paired electronic state. And also, It is found that with atom doping, the difference between carriers’ mobilities (the hole mobility and electron mobility) of semiconducting tubes can be regulated to reach one order of magnitude, especially the hole mobility and electron mobility can be obviously enhanced by a higher gate voltage. For example, when the gate voltage is increased to 18 V, the hole mobility rises nearly 20 times compared with the case without gate voltage.

Spin-polarized Electron Current from Mn-doped Closed Zigzag GaN Nanotubes

Spin-Polarized Electron Emitter: Mn-Doped Gan Nanotubes And Their Arrays

Ferromagnetism in Mn-doped GaN Nanowires.

Electronic Structure Investigation of GaN Nanowire Doped with Transition Metals Particles via First Principle

Spin-dependent transport in GaAs nanowire-based devices

Electrical transport between epitaxial manganites and carbon nanotubes

Transport properties of Mn-doped/adsorbed zigzag boron nitride nanoribbon based nanodevices

Magnetic Mn-Doped Ge Nanostructures

Hole Mediated Magnetism In Mn-Doped Gan Nanowires

Spin current distribution in antiferromagnetic zigzag graphene nanoribbons under transverse electric fields

Spin polarized current in a junction of zigzag carbon nanotube

Electronic Structure And Magnetic Properties Of Mn-Doped Zno Nanotubes: An Ab Initio Study

Electrical Spin Injection and Detection in Mn5Ge3/Ge/Mn5Ge3 Nanowire Transistors.

Spin-polarized Electron Transport Through Graphene Nanoribbon with Zigzag Edges.

Spin Transport in Ge Nanowires for Diluted Magnetic Semiconductor-Based Nonvolatile Transpinor

Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges

Electronic Structure and Magnetic Properties of Substitutional Transition-Metal Atoms in GaN Nanotubes

High-efficient spin injection in GaN through a lattice-matched tunnel layer

High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

Spin-polarized Transport Through a ZnSe/Zn1−xMnxSe Heterostructure under an Applied Electric Field

Non-metallic Atom Doped GaN Nanotubes: Electronic Structure, Transport Properties, and Gate Voltage Regulating Effects