Abstract:Barium zirconate ($\mathrm{BaZr}{\mathrm{O}}_{3}$) has attracted increasing attention due to its distinguished dielectric property and high chemical stability. As one kind of perovskite oxide, $\mathrm{BaZr}{\mathrm{O}}_{3}$ often exhibits a delicate interplay of lattice distortions and strain. In this work, the effect of strain on the ferroelectric and antiferrodistortive distortions in $\mathrm{BaZr}{\mathrm{O}}_{3}$ thin films is investigated at finite temperature by using density functional theory calculations and the first-principles based effective Hamiltonian method. It is found that due to the delicate balance between antiferrodistortive and ferroelectric distortions, polarization in $\mathrm{BaZr}{\mathrm{O}}_{3}$ thin films at absolute zero kelvin can be activated only under an in-plane tensile strain larger than 3.0%. The rotation of oxygen octahedra (antiferrodistortive distortion) is along the out-of-plane direction under the compressive strain and small tensile strain, whereas it changes to the in-plane direction when the tensile strain is larger than 0.3%. When the tensile strain increases to 4.1%, both rotation of oxygen octahedra and polarization are along the [110] direction. Furthermore, the temperature dependence of ferroelectric and antiferrodistortive distortions under different strains is investigated by using an effective Hamiltonian model. The strain-temperature phase diagram is calculated to identify the different distortions under different strains and temperatures.

Influence of Oxygen Partial Pressure on the Structural and Dielectric Properties of Ba(Zr0.3ti0.7)O-3 Thin Films Grown on (laalo3)(0.3)(sr2altao6)(0.35) (001) Using Pulsed Laser Deposition

Oxygen Pressure Dependence of Structural and Tunable Properties of PLD-deposited Ba0.5Sr0.5TiO3 Thin Film on LaAlO3-substrate

Effect of Sputtering-Target Composition on the Structure, Dielectric, Ferroelectric, and Energy Storage Properties of Highly (00L)-Oriented Ba(ZrxTi1–x)O3 Films

Oxygen Pressure Dependence Of Structure And Electrical Properties Of Pulsed Laser Deposited Ba(Fe(1/2)Nb(1/2))O(3) Thin Films

Strain-temperature Phase Diagram of BaZrO3 with Antiferrodistortive Distortions

Influence Of Oxygen Pressure On Structures And Electrical Properties Of Lead-Free (K0.44na0.52li0.04)(Nb0.86ta0.10sb0.04)O3 Thin Films Deposited By Pulsed Laser Deposition

Effect of Oxygen Pressure on Structure and Properties of Bi1.5Zn1.0Nb1.5O7 Pyrochlore Thin Films Prepared by Pulsed Laser Deposition

Structural Behavior of Thin BaTiO3 Film Grown at Different Conditions by Pulsed Laser Deposition

Effects of substrate temperature and ambient oxygen pressure on growth of Ba(Fe 1/2 Nb 1/2 )O 3 thin films by pulsed laser deposition

In-plane Dielectric Properties of Epitaxial 0.65pb(mg1∕3nb2∕3)o3−0.35pbtio3 Thin Films in a Very Wide Frequency Range

Growth, Structure And Dielectric Characteristics Of Ba[(Fe1/2nb1/2)(0.1)Ti-0.9]O-3 Thin Films By Pulsed Laser Deposition

Structural And Dielectric Properties Of Ba(Zrxti1-X)O-3 Thin Films Prepared By The Sol-Gel Process

The Effects of Oxygen Pressure on the Structural, Magnetic, and Ferroelectric Properties of 0.55bife0.95ga0.03mn0.02o3–0.45batio3 Thin Films

Effects of Substrate Temperature and Oxygen Pressure on Microstructures and Conductivity of Ba0.95La0.05PbO3 Thin Films

Preparation and characterizations of Ba(Zr,Ti)O3/(Ba,Sr)TiO3 heterostructures grown on (LaAlO3)0.3(Sr2AlTaO6)0.35 single crystal substrates by pulsed laser deposition

Structure and dielectric properties of Zr-Al-O thin films prepared by pulsed laser deposition

Influence of Ambient Oxygen Pressure on the Preferred Orientation, Microstructures, and Dielectric Properties of (Ba1-Xsrx)tio3 Thin Films with Compositionally Graded Structures

Effects of Oxygen to Argon Ratio on Ba(Zr 0.2 Ti 0.8 )O 3 Thin Films Prepared by RF Magnetron Sputtering

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

Effect of Oxygen Pressure on Structural and Electrical Properties of Pulsed Laser Deposition-Derived Zn0.95mg0.05o: Li Thin Films

Effect of Oxygen Partial Pressure and Anneal Temperature on Batio3 Thin Film Crystal Structure