Abstract:One-dimensional (1D) nano-materials have attracted a plenty of attention due to their novel structures and properties. Our group has carried out researches on synthesis, structure and property of 1D nano-materials, which are introduced in this paper. First, size effects on the crystal structure of Ag nanowires and on Young’s modulus in [0001] oriented ZnO nanowires, respectively, have been revealed and modeled. The former is concerning the systemic energy of an individual Ag nanowire. The latter is caused by the surface stiffening effect arising from surface relaxation induced bond length contractions in the ZnO nanowires. Second, structures of 1D helical nano-materials including SWCNT (single-walled carbon nanotube), B-DNA and MWCNT (mutli-walled carbon nanotube) have been studied. It is shown that there is strong orientation dependence of diffraction intensities from SWCNT and B-DNA, which can even result in certain layer lines missing in their diffraction patterns. Also, it is demonstrated that high-resolution transmission electron microscope (TEM) images of sidewall regions of MWCNTs are not structural ones and from the interference of the {0002} and the {1011} diffraction waves. Third, arrays of four types of 1D heterojunctions have been synthesized. Among these 1D heterojunctions, the interfacial structures of the Ni/MWCNT/a-CNT(amorphous carbon nanotube) heterojunctions show that multiple outer walls in the MWCNTs can simultaneously participate in electrical transport. The electrical properties of the Ni/MWCNT/a-CNT and the Ag/a-CNT heterojunctions have been measured. As a result, it is found that the contacts between the Ag nanowires and the a-CNTs are ohmic ones with universal significance, and that each Ni/MWCNT/ a-CNT contains two diodes connected in series face-to-face. Moreover, most of the diodes have the most nearly ideal characteristics of Schottky contacts, indicated by quantitative analysis with the thermionic emission theory. Last, our group has developed a novel technique for rapidly producing large-area highly-oriented Si nanowire arrays on Si wafers by scratching the Si surface with metal nanoparticles near room temperature in HF solution. By this method, Si nanowires with desirable axial crystallographic directions, desirable doping characteristics and remarkable antireflection property can be readily obtained. The Si nanowire arrays have the potential applicability as an antireflective layer for photovoltaic devices and optical detectors. Furthermore, a combination of this method and the nanosphere lithography has been developed to fabricate large-scale Si and Si 1−x Ge x quantum dot arrays with controllable height, diameter and center-to-center distance.

Uniform Pb Nanowires of Magic Thickness on Si(111) Controlled by Elastic Interaction and Quantum Size Effects

Ultrafast growth of single-crystalline Si nanowires

Highly Ordered Arrays of Macroscopically Long Pb Nanobelts with Atomic-Level Controlled Thickness and Width on Si

Self‐Assembled Pb Nanostructures on Si(111) Surfaces: from Nanowires to Nanorings

Tiny SiO2 nano-wires synthesized on Si (111) wafer

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Synthesis and Raman Spectra of Si-Nanowires

Tiny SiO2 nano-wires synthesized on Si (1 1 1 ) wafer

Controlled synthesis of millimeter-long silicon nanowires with uniform electronic properties.

Anomalous Magnetoresistance Oscillations and Enhanced Superconductivity in Single-Crystal Pb Nanobelts

Strong Quantum Confinement in Ordered PbSe Nanowire Arrays

Surface Morphologies of Pb Thin Films on Si(111)

GROWTH AND STABILITY OF ULTRA-THIN Pb FILMS ON Pb/Si(111)-α-√3 × √3

Epitaxial Growth of Vertically Free-Standing Ultra-Thin Silicon Nanowires.

Size Dependence in One-Dimensional Nano-Materials and One-Dimensional Heterojunctions

Size-dependent Superconducting State of Individual Nanosized Pb Islands Grown on Si(111) by Tunneling Spectroscopy.

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Controlled Vapor-Liquid-Solid Growth of Long and Remarkably Thin Pb 1- x Sn x Te Nanowires with Strain-Tunable Ferroelectric Phase Transition

Quantum Size Effects Induced Novel Properties in Two-Dimensional Electronic Systems: Pb Thin Films on Si(111)

Selective area epitaxy of PbTe-Pb hybrid nanowires on a lattice-matched substrate