Abstract:The group-Ⅲ nitrides and their related ternary alloys have been becoming the most attractive material for light emitting diodes (LEDs) and laser diodes (LDs) in the UV and blue spectral range. However, the origins of the yellow luminescence (YL), which is commonly observed in almost undoped and n-type GaN, remain unclear. The nature and the role of initial nitridation of sapphire surface and the generation of threading dislocation (TD) are ambiguous too. It is a possible way to resolve the above problems by studying the microstructures and optical properties combining the growth conditions. In this work, two kinds of GaN films were grown by MOCVD under different initial nitridation time (180 seconds for Sample A, and 90s for Sample B). The growth temperature is about 950℃. The cross-sectional transmission electron microscope (TEM) is performed near the GaN/sapphire interface. Corresponding the growth processes, there are three zones in the GaN layer: buffer layer, zone and sound zone. There are haystack-like domains in the faulted zone, in which there are high density of extended defects. The thickness of the faulted zone is about 0.4μm. Just above this region, the defects density is reduced sharply, and the quality of the layer is improved, which is identified by electron diffraction (ED) patterns. In comparison, Sample A shows about an order lower density of extended defects than Sample B, their columnar diameter is larger and its ED pattern is sharper, too. The buffer layer of Sample B is more smooth than Sample A. The appropriate rougher morphology of the buffer layer may cause that the structural disorder between the high-temperature (HT) grown island and the buffer layer is accommodated by Frank and Shockley partial dislocations. However, the TD is likely to propagate into the HT GaN from the smooth surface of the buffer layer grown after extensively nitridation of substrate. According to the position and width of X-ray diffraction peaks of (0002) and (0004), the size of crystalline grain, D and the residual strain could be calculated. The values of(D,e in)of Sample A and B are (175nm,0.167%) and (90nm,0.141%), respectively. Small size of crystalline grain may be advantageous to relieve the lattice and thermal mismatch stress, but it lead to higher density of extended defects. The width of GaN (0002) reflections of Sample A is 4min lower than that of Sample B. This result may be due to the lower screw TD. The higher density of screw TD may widen the GaN (0002) peak in X-ray rocking curve. In room temperature PL spectra, the ratio of band-edge emission intensity to YL one of Sample A is 3 orders larger than that of Sample B. Furthermore the YL in Sample B is stronger and has fine structure, while that in Sample A is nearly invisible in the PL spectrum. The GaN epilayer with high quality exhibits almost no YL emission. It is well known that the YL corresponds to the deformed crystal structure. We assigned that the screw TD and mixed TD are attributed to the YL referring to our XRD results.

Characteristic of Cathodoluminescence Excition Density for a-Plane GaN

Different Origins of the Yellow Luminescence in As-Grown High-Resistance GaN and Unintentional-Doped GaN Films

Nature and Elimination of Yellow-Band Luminescence and Donor–acceptor Emission of Undoped GaN

Luminescence property of GaN films with change of thickness

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Microstructural and Optical Properties of GaN Films on Nitrided Sapphire Substrates

Structure and Luminescence of A-Plane GaN on R-Plane Sapphire Substrate Modified by Si Implantation*

Mechanism of yellow luminescence in GaN at room temperature

Dislocation Clustering and Luminescence Nonuniformity in Bulk Gan and Its Homoepitaxial Film

Effect of the V/III Ratio During Buffer Layer Growth on the Yellow and Blue Luminescence in Undoped GaN Epilayer

Luminescence Characteristics in Hexagonal and Cubic‐phase GaN on Micropatterned Si(100) Substrate

Microstructure and Physical Properties of GaN Films on Sapphire Substrates

Cathoderayluminescence of AlxGa1-xN and Mg-doped Al0.54Ga0.46N

Cathodoluminescence of quantized energy states at AlGaN/GaN interface

Photoluminescence study of GaN film grown by ammoniating Ga2O3/Al2O3 deposited on Si(111) substrate

Epitaxial Growth and Characteristics of Nonpolar a-Plane InGaN Films with Blue-Green-Red Emission and Entire In Content Range

C and Si Ion Implantation and the Origins of Yellow Luminescence in Gan

Study of Gan Thin Films Grown on Vicinal Sic (0001) Substrates by Molecular Beam Epitaxy

Large Negative Thermal Quenching and Broadening Lineshape Analysis of Acceptor-Associated Yellow Luminescence in Si-Doped GaN

Cathodoluminescence Study of InGaN/GaN Quantum-Well LED Structures Grown on a Si Substrate

Cathodoluminescence Study of Optical Properties along the Growth Direction of ZnO Films on GaN Substrate