Effects of reactant temperature on the alignment and photoluminescence properties of ZnO nanowire arrays

ZHAO Yong,CHEN Xian,LIU Bing-fa,CHENG Guo-an,TANG Jian-cheng,FANG Li-guang,SHENG Guang-hu
DOI: https://doi.org/10.3969/j.issn.1002-0322.2012.02.017
IF: 4
2012-01-01
Vacuum
Abstract:Using gold film as catalyst and mixture of ZnO and carbon powder as source of reactive precursors,respectively, ZnO nanowire arrays were synthesized on the monocrystalline silicon substrates by carbon-thermal method.Influence of source temperature on the surface morphology,crystal and optical properties were investigated by scanning electron microscopy(SEM), X-ray diffraction(XRD) and photoluminescence(PL).ZnO nanowire arrays obtain good alignment with(002) preferential orientation at 920℃,because lower temperature is not favorable for dense growth of ZnO nanowires and higer temperature will result in secondary evaporation of Zn atoms which is also not advantageous for good alignment and preferential growth of ZnO nanowire arrays.It is revealed that ZnO nanowires obtained the most perfect crystal structrure at source temperature of 880℃ by showing the strongest ultraviolet(UV) emission.As ZnO nanowires were synthesized in oxygen-deficient environment,oxygen vacancies which are responsible for green emission are the predominant defects.Rising temperature will result in the accelerated growth rate of ZnO nanowire and more oxygen vacancies in the thicker ZnO nanowire arrays,hence,green emission was increased by rising temperature and would get the maximum intensity at 920℃,but was suppressed by further higher temperature which will result in the number decreasing of oxygen vacancies by evaporation of Zn atoms from the nanowire surface.
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