Preparation and Photoelectrochemical Properties of CdS, CdSe Co-sensitized ZnO Film Electrode
Zhao Wenyan,Tian Chuanjin,Xie Zhipeng,Wang Chang'an,Fu Wuyou,Yang Haibin
2018-01-01
Rare Metal Materials and Engineering
Abstract:The heterojunction photoanode of CdS, CdSe quantum dots co-sensitized ZnO nanorod arrays were designed and fabricated through simple methods. In this process, CdS and CdSe quantum dots were prepared by a successive ion layer adsorption reaction (SILAR) method, and one-dimensional ZnO nanorod array films were prepared via ZnO seed layers by a hydrothermal method. The structure, morphology and photoelectrochemical properties of the samples were studied by X-ray diffraction (XRD), field emission scanning electron microscope (SEM), and electrochemical workstation. The results show that the photoelectric properties of CdS, CdSe quantum dot sensitized electrodes are greatly improved compared with those of ZnO nanorod film electrode. Among them, the photoelectric conversion efficiency value of CdSe(4c)/CdS(4c)/ZnO is 17 times as large as that of ZnO nanorod film electrode, up to 1.894%.