Electron Localization and Spin-Dependent Transport Property of Conb0.6mn0.4sb Half-Heusler Alloy

Shandong Li,Guoxia Zhao,Zhonglin Lu,Wenqin Zou,Zhigao Huang,Fengming Zhang,Youwei Du
DOI: https://doi.org/10.1016/j.jmmm.2006.01.046
IF: 3.097
2006-01-01
Journal of Magnetism and Magnetic Materials
Abstract:The transport property of CoNb0.6Mn0.4Sb half-Heusler alloy has been investigated from 2 to 300K in the presence of the magnetic field. It has been found that the temperature dependence of resistivity exhibits a semiconducting-like (SCL) behavior at low temperature (less than 50K), while an up-then-down (UD) shape at temperature greater than 50K. In the SCL range, the transport regime is well described by Mott localization law ρ=ρ0×exp(T0/T)p with p=1/4 than by an activation law. In the UD region, the resistivity is sensitive to the magnetic field, and the transport property is determined by spin-dependent scattering and electron localization.
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