Abstract:II-VI semiconductor heterojunctions show huge potential for application in nanodevice fabrication due to their type-II alignments owing to the better spatial separation of electrons and holes. However, the hetero-epitaxial growth of high-quality heterostructures is still a challenge, especially for materials with large lattice mismatch. In this work, well-aligned single-crystalline ZnO/ZnS core/shell nanorod arrays were obtained by introducing an Al2O3 buffer layer. It is interesting that the nature of the ZnS layer varies with the thickness of the Al2O3 layer. When Al2O3 is less than 2 nm, the interaction between the substrate and epilayer is strong enough to penetrate through the buffer layer, enabling the growth of ZnS on Al2O3-coated ZnO nanorod arrays. On the basis of detailed characterization, a rational growth mechanism of the core/shell heterostructure is proposed, in which the Al2O3 interlayer can eliminate voids due to the Kirkendall effect around the interface and accommodate a misfit dislocation between the inner ZnO and outer ZnS, resulting in more sufficient strain relaxation in the epitaxy. In addition, cathodoluminescence measurements demonstrate that the optical properties of the ZnO/ZnS heterostructure could be effectively improved by taking advantage of the thin Al2O3. The I-V curves characterized by PeakForce tunneling atomic force microscopy reveal that the heterostructure shows a typical rectifying behavior and good photoresponse to ultraviolet light. These findings may provide a reasonable and effective strategy for the growth of highly lattice-mismatched heterostructure arrays buffered by the Al2O3 layer, broadening the options for fabricating heterojunctions and promoting their applications in optoelectronic devices.

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Precisely-controlled Fabrication of Single ZnO Nanoemitter Arrays and Their Possible Application in Low Energy Parallel Electron Beam Exposure.

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Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

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Hot electron field emission via individually transistor-ballasted carbon nanotube arrays.

Fabrication of ZnO/Al2O3 core–shell nanostructures and crystalline Al2O3 nanotube

Controlled Growth and Field Emission of Vertically Aligned AlN Nanostructures with Different Morphologies

Optimizing the Field Emission Properties of ZnO Nanowire Arrays by Precisely Tuning the Population Density and Application in Large-Area Gated Field Emitter Arrays.

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Field emission arrays fabricated utilizing conjugated ZnO quantum dot/carbon nanotube hybrid nanocomposite

Aln Nanorod and Nanoneedle Arrays Prepared by Chloride Assisted Chemical Vapor Deposition for Field Emission Applications

Zno Nanorod Arrays with Tunable Size and Field Emission Properties on an Ito Substrate Achieved by an Electrodeposition Method

Construction of AlN-Based Core–Shell Nanocone Arrays for Enhancing Field Emission

Controlled Synthesis and Field Emission Properties of Zno Nanostructures with Different Morphologies

Large-Scale Aligned Silicon Carbonitride Nanotube Arrays: Synthesis, Characterization, and Field Emission Property

Al2O3 buffer-facilitated epitaxial growth of high-quality ZnO/ZnS core/shell nanorod arrays

Temperature induced interface and optical properties of the multi-layer nanotube network

Enhanced field emission and patterned emitter device fabrication of metal-tetracyanoquinodimethane nanowires array

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