Abstract:Results are presented for modelling of the evaporation and magnetron sputter deposition of Zn(x)O(y) onto an O-terminated ZnO (0001¯) wurtzite surface. Growth was simulated through a combination of molecular dynamics (MD) and an on-the-fly kinetic Monte Carlo (otf-KMC) method, which finds diffusion pathways and barriers without prior knowledge of transitions. We examine the effects of varying experimental parameters, such as substrate bias, distribution of the deposition species and annealing temperature. It was found when comparing evaporation and sputtering growth that the latter process results in a denser and more crystalline structure, due to the higher deposition energy of the arriving species. The evaporation growth also exhibits more stacking faults than the sputtered growth. Post-annealing at 770 K did not allow complete recrystallization, resulting in films which still had stacking faults where monolayers formed in the zinc blende phase, whereas annealing at 920 K enabled the complete recrystallization of some films to the wurtzite structure. At the latter temperature atoms could also sometimes be locked in the zinc blende phase after annealing. When full recrystallization did not take place, both wurtzite and zinc blende phases were seen in the same layer, resulting in a phase boundary. Investigation of the various distributions of deposition species showed that, during evaporation, the best quality film resulted from a stoichiometric distribution where only ZnO clusters were deposited. During sputtering, however, the best quality film resulted from a slightly O rich distribution. Two stoichiometric distributions, one involving mainly ZnO clusters and the other involving mainly single species, showed that the distribution of deposition species makes a huge impact on the grown film. The deposition of predominantly single species causes many more O atoms at the surface to be sputtered or reflected, resulting in an O deficiency of up to 18% in the deposited film and therefore resulting in more stacking faults and phase boundaries. The methods used allow analysis of key mechanisms that occur during the growth process and give hints as to the optimum conditions under which complete crystalline layers can form.

Surface Morphology Evolution During LP-MOCVD Growth of ZnO on Sapphire

Effect of Growth and Annealing on ZnO Buffer by MOCVD

Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

Comparisons of Structural and Optical Properties of ZnO Films Grown on Sapphire and Si(001)

Optimization study of metal-organic chemical vapor deposition of ZnO on sapphire substrate

Growth Parameters and Substrate Treatment for the MOCVD Growth of ZnO

LP-MOCVD Growth and Properties of Zn1－xMgxO Thin Film

The Roles of Buffer Layer Thickness on the Properties of the ZnO Epitaxial Films

Effect of Sapphire Substrate Pre-Treatment on the Growth of Zno Films

Growth of Cubic MgxZn1-xO Films and Characterization

ZnO Growth on Si with Low-Temperature ZnO Buffer Layers by ECR-assisted MBE

MBE‐grown ZnO Film on Sapphire Substrate with Double Buffer Layers

Oxidants in ZnO Thin Film Growth by LP-MOCVD

ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy

MOCVD growth of self-arranged ZnO nanosize islands

Mocvd Growth and Properties of Zno Films Using Dimethylzinc and Oxygen

Surface Morphology Evolution of CeO2/YSZ (001) Buffer Layers Fabricated Via Magnetron Sputtering

Effect of a ZnO Buffer Layer on the Properties of Epitaxial ZnO:Ga Films Deposited on C-Sapphire Substrate

Structural Characterization of Zn-polar ZnO Films Grown on Mg-modified C-Al2o3 (0001) Surface

Modelling the growth of ZnO thin films by PVD methods and the effects of post-annealing