Abstract:GaN-based blue light-emitting diodes (LEDs) has been energy saving, commercial solid state lighting devices. But the research on GaN-based white-lighting LEDs has been expected to further study before commercialization. One kind of white LEDs consists of GaN-based LEDs and luminant phosphors, but conventional phosphors for GaN-based LEDs are undesirable, for example, phosphors matching GaN-based LEDs can hardly be found. Furthermore, losses caused by self-absorption or scattering of secondary photons in the phosphor medium itself contributes to a large part. In this study, CdTe nanocrystals as nanophosphor for GaN-based blue LEDs are discussed. CdTe NCs were prepared in aqueous solution employing thioglycolic acid (TGA) as stabilizer, the corresponding PL peak position of the NCs excited by 470 nm is 566 nm with full width at half maximum (FWHM) of 30 nm, indicating of monodisperse distribution. The large Stokes shift between its absorption and PL spectra would alleviate self-absorption loss. The InGaN/GaN multiple quantum wells (MQWs) epitaxial wafers were grown at (0001) plane sapphire substrate by the metalorganic chemical-vapor deposition systems (MOCVD), and flip-chip blue LEDs were fabricated with the standard procedure, blue light from MQWs was extracted from polished sapphire plane. A hybrid structure integrating flip-chip LEDs and nanocrystals was reported. CdTe NCs were deposited directly on transparent sapphire layer, which avoids the light emitted by CdTe NCs traped in high-index GaN cavity. And another advantage of the flip-chip structure for CdTe NCs reduces the losses from quenching of the luminescence, a behavior that has been well documented with NCs attaching to smooth metallic electrodes. Blue light part from InGaN LEDs in the hybrid structure provides blue element, and also acts as a pumping resource to excite CdTe nanocrystals to emit yellow light. From photoluminescence excitation (PLE) spectrum of CdTe NCs and electroluminescence (EL) of GaN-based LEDs, the absorption peak around 480 nm in the PLE spectrum match emission peak from InGaN blue LED, which indicates CdTe NCS can be efficiently excited by GaN blue light. The hybrid light of the structure was characterized by the room-temperature electroluminescence (EL) spectra, and CIE chromaticity coordinates corresponding to the EL spectra were obtained. With the hybrid structure, a hybrid white light has been achieved by combining blue component and photoluminescence of CdTe nanocrystals. Chromaticity coordinate of (x = 0.29, y = 0.30) was obtained at 10 mA driving current, and already lies in the white area. The experiment also conducted EL spectra with different forward driving current. It was demonstrated that the chromaticity coordinate of the hybrid device hardly varies with injection current, within 20 mA current level, the fluctuation of chromaticity coordinate lies about 5%. This is a favorable property of the hybrid LED as the color of the device is constant and independent of the injection current.

Three-band white light from InGaN-based blue LED chip precoated with Green/red phosphors

White LED Based on YAG : Ce,Gd Phosphor and CdSe–ZnS Core/Shell Quantum Dots

White light-emitting diodes using blue and yellow–orange-emitting phosphors

Ca(La1-xEux)4Si3O13 red emitting phosphor for white light emitting diodes

White-light-emitting Diodes Based on Ba2+ Co-Doped Sr3SiO5: Ce3+, Li+ Phosphor

Fabrication and Properties for White LED with InGaN SQW

M9Gd2W4O24:Eu3+ (M2+ = Ca2+ and Sr2+) red phosphors for NUV and blue InGaN-based WLEDs

A novel white light-emitting diode (w-LED) fabricated with Sr 6 BP 5 O 20 :Eu 2+ phosphor

Blue-Green Emitting Phosphor for White Light-Emitting Diodes (Leds)

Orange phosphor Li2SrSiON2:Eu2+ for blue light chip based warm white LEDs

White-lighting LEDs from InGaN Blue LEDs and CdTe Nanocrystals

Monolithically Integrating III‐Nitride Quantum Structure for Full‐Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth

Synthesis and Luminescence of Ca[sub 3]Ln[sub 2]W[sub 2]O[sub 12]:Eu[sup 3+] for NUV-InGaN-Based Red-Emitting LED

High-color-rendering-index Phosphor-Free InGaN-based White Light-Emitting Diodes by Carrier Injection Enhancement Via V-pits

A novel white light-emitting diode (w-LED) fabricated with Sr<sub>6</sub>BP<sub>5</sub>O<sub>20</sub>:Eu<sup>2+</sup> phosphor

A Single Red InGaN-based Light-Emitting Diode with a Europium (III) Ternary Complex As Mono-Phosphor.

A Novel Orange Phosphor of Eu2+-activated Calcium Chlorosilicate for White Light-Emitting Diodes

An Intense Green/Yellow Dual-Chromatic Calcium Chlorosilicate Phosphor Ca[sub 3]sio[sub 4]cl[sub 2]:Eu[sup 2+]–mn[sup 2+] for Yellow and White LED

Photonic Crystal Phosphors Integrated on a Blue LED Chip for Efficient White Light Generation

Synthesis And Luminescence Of Ca(3)Ln(2)W(2)O(12): Eu3+ For Nuv-Ingan-Based Red-Emitting Led

Red InGaN-based light-emitting diodes with a novel europium (III) tetrabasic complex as mono-phosphor